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IEICE TRANSACTIONS on Electronics

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

Nobuhiko TANAKA, Mitsufumi SAITO, Michihiko SUHARA

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Summary :

Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.

Publication
IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.820-825
Publication Date
2011/05/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E94.C.820
Type of Manuscript
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
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