Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.
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Nobuhiko TANAKA, Mitsufumi SAITO, Michihiko SUHARA, "Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 820-825, May 2011, doi: 10.1587/transele.E94.C.820.
Abstract: Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.820/_p
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@ARTICLE{e94-c_5_820,
author={Nobuhiko TANAKA, Mitsufumi SAITO, Michihiko SUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes},
year={2011},
volume={E94-C},
number={5},
pages={820-825},
abstract={Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.},
keywords={},
doi={10.1587/transele.E94.C.820},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 820
EP - 825
AU - Nobuhiko TANAKA
AU - Mitsufumi SAITO
AU - Michihiko SUHARA
PY - 2011
DO - 10.1587/transele.E94.C.820
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.
ER -