We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.

A composite right/left-handed (CRLH) transmission line with demultiplexing property is proposed towards short-range functional wireless interconnects. The CRLH line is designed by analyzing dispersion relation of the microstrip line having a split-ring and a double-stub structure to realize frequency selective properties for leaky wave radiation. A prototype device is fabricated and estimated to study feasibility of the demultiplexing operation around ten GHz.

Generating mechanism of excess noise in semiconductor lasers induced by optical feedback is theoretically analyzed and experimentally examined. In case that the reflecting point is relatively far from the laser, noise gradually increases due to growing up of the external cavity modes with increasing of optical feedback. When the reflecting point is near, the lasing operation turns into unstable state abruptly with relatively large amount of feedback without showing the gradual increase of noise.

We numerically demonstrate a possibility on-off keying (OOK) type of modulation over tens gigabits per second for sub-terahertz radiation in our proposed wireless transmitter device structure towards radio over fiber (RoF) technology. The integrated device consists of an InP-based compound semiconductor resonant tunneling diode (RTD) adjacent to an InP-based photo diode (PD), a self-complementary type of bow-tie antenna (BTA), external microstrip lines. These integration structures are carefully designed to obtain robust relaxation oscillation (RO) due to the negative differential conductance (NDC) characteristic of the RTD and the nonlinearity of the NDC. Moreover, the device is designed to exhibit OOK modulation of RO due to photo current from the PD inject into the RTD. Electromagnetic simulations and nonlinear equivalent circuit model of the whole device structure are established to perform large signal analysis numerically with considerations of previously measured characteristics of the triple-barrier RTD.

Large-signal-based nonlinear models are developed to analyze a variety of dynamic performances in a resonant tunneling diode (RTD) with peripheral circuits such as an integrated broad band bow-tie antenna, a bias circuit and a bias stabilizer circuit. Dynamic modes of the RTD are classified by the time-domain analysis with the model. On the basis of our model, we suggest a possibility to discuss a terahertz order oscillation mode control, and the ASK modulation in several tens Gbit/sec in the RTD with the broad band antenna. Validity of the model and analysis is shown by explaining measured results of modulated oscillation signals in fabricated triple-barrier RTDs.

Current-voltage characteristics of triple-barrier resonant tunneling diodes are theoretically analyzed taking phase breaking into account. The peak current in predicted using conventional theories is much smaller, typically by a factor of 1/3000 for a coherent length of 100 nm, than that measured because the incoherent tunneling process is neglected. We take both the coherent and the incoherent tunneling processes into account in the analysis and show that the product of the peak current and the voltage width at half maximum of the peak current is almost constant even when the phase coherent length varies between 50 and 1000 nm. The peak current density increases by two orders of magnitude in the model developed here.

We identify a broadband equivalent circuit of an on-chip self-complementary antenna integrated with a µm-sized semiconductor mesa structure whose circuit elements can be interpreted by using closed-form analysis. Prior to the equivalent circuit analysis, an electromagnetic simulation is done to investigate frequency independency of the input impedance for the integrated self-complementary antenna in terahertz range.

Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.

The generation mechanism for excess intensity noise due to optical feedback is analyzed theoretically and experimentally. Modal rate equations under the weakly coupled condition with external feedback are derived to include the mode competition phenomena in DFB and Fabry-Perot lasers. We found that the sensitivity of the external feedback strongly depends on design parameters of structure, such as the coupling constant of the corrugation, the facet reflection and the phase relation between the corrugation and the facet. A DFB laser whose oscillating wavelength is well adjusted to Bragg wavelength through insertion of a phase adjustment region becomes less sensitive to external optical feedback than a Fabry-Perot laser, but other types of DFB lasers revealing a stop band are more sensitive than the Fabry-Perot laser.

S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.

In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.

We investigate a finite-sized self-complementary bow-tie antenna (SC-BTA) integrated with a semiconductor mesa with respect to radiation characteristics such as the peak radiation frequency and bandwidth around the fundamental radiation mode. For this investigation, we utilize an equivalent circuit model of the SC-BTA derived in our previous work and a finite element method solver. Moreover, we derive design guidelines for the radiation characteristics in the form of size scaling-rules with respect to the antenna outer size for a terahertz transmitter.

We have derived the physics-based equivalent circuit model of a semiconductor-integrated bow-tie antenna (BTA) for expressing its impedance and radiation characteristics as a terahertz transmitter. The equivalent circuit branches and components, consisting of 16 RLC parameters are determined based on electromagnetic simulations. All the values of the circuit elements are identified using the particle swarm optimization (PSO) that is one of the modern multi-purpose optimization methods. Moreover, each element value can also be explained by the structure of the semiconductor-integrated BTA, the device size, and the material parameters.

Monolithic gyrators are proposed on the basis of integrating resonant tunneling diodes (RTDs) and HEMT toward realization of broadband and high-Q passives. Feasibility of millimeter-wave active inductors using the gyrator are described with equivalent circuit analysis and numerical calculations assuming InP based RTDs and a HEMT to be integrated.

We derive physics-based formula of current-voltage characteristic for resonant tunneling diodes (RTDs) by using the Voigt function. The Voigt function describes the mixing condition of homogeneous and inhomogeneous broadenings of peak energy width in transmission probability, which is sensitively reflected to nonlinear negative differential resistance of RTDs. The obtained formula is applicable to the SPICE model of RTD without performing numerical integrals. We indicate validity of the formula by comparing to measured data for double-barrier and triple-barrier RTDs.

In general, tunnel diodes exhibit various types of oscillation mode: the sinusoidal mode or the nonsinusoidal mode which is known as the relaxation oscillation (RO) mode. We derive a condition for generating the RO in resonant tunneling diodes (RTDs) with essential components for equivalent circuit model. A conditional equation to obtain sufficient nonlinearity towards the robust RO is clarified. Moreover, its condition also can be applied in case of a bow-tie antenna integrated RTD, thus a design policy to utilize the RO region for the antenna integrated RTD is established by numerical evaluations of time-domain large-signal nonlinear analysis towards a terahertz transmitter for broadband wireless communications.