IEICE TRANSACTIONS on Electronics
Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode
Summary :
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.871-878
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.871
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Masanari FUJITA, Mitsufumi SAITO, Michihiko SUHARA, "Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 871-878, May 2012, doi: 10.1587/transele.E95.C.871.
Abstract: In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.871/_p
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@ARTICLE{e95-c_5_871,
author={Masanari FUJITA, Mitsufumi SAITO, Michihiko SUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode},
year={2012},
volume={E95-C},
number={5},
pages={871-878},
abstract={In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.},
keywords={},
doi={10.1587/transele.E95.C.871},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode
T2 - IEICE TRANSACTIONS on Electronics
SP - 871
EP - 878
AU - Masanari FUJITA
AU - Mitsufumi SAITO
AU - Michihiko SUHARA
PY - 2012
DO - 10.1587/transele.E95.C.871
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.
ER -
English
