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Kotaro AIKAWA Michihiko SUHARA Takumi KIMURA Junki WAKAYAMA Takeshi MAKINO Katsuhiro USUI Kiyoto ASAKAWA Kouichi AKAHANE Issei WATANABE
S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.
Tak-Keung LIANG Kouichi AKAHANE Naokatsu YAMAMOTO Luis Romeu NUNES Tetsuya KAWANISHI Masahiro TSUCHIYA
Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.
Naokatsu YAMAMOTO Kouichi AKAHANE Toshimasa UMEZAWA Tetsuya KAWANISHI
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
Naokatsu YAMAMOTO Kouichi AKAHANE Tetsuya KAWANISHI Hideyuki SOTOBAYASHI Yuki YOSHIOKA Hiroshi TAKAI
The quantum dot optical frequency comb laser (QD-CML) is an attractive photonic device for generating a stable emission of fine multiple-wavelength peaks. In the present paper, 1.0-GHz and 10-ps-order short optical pulsation is successfully demonstrated from a hybrid mode-locked QD-CML with an ultrabroadband wavelength tuning range in the T+O band. In addition, 10-GHz high-repetition intensity-stable short optical pulse generation with a high S/N ratio is successfully demonstrated using an external-cavity QD-CML with a 10th-harmonic mode-locking technique.
Shotaro YASUMORI Seiya MORIKAWA Takanori SATO Tadashi KAWAI Akira ENOKIHARA Shinya NAKAJIMA Kouichi AKAHANE
An optical mode multiplexer was newly designed and fabricated using LiNbO3 waveguides. The multiplexer consists of an asymmetric directional coupler capable of achieving the phase-matching condition by the voltage adjustment. The mode conversion efficiency between TM0 and TM1 modes was quantitatively measured to be 0.86 at maximum.