Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy
Summary :
Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.2 pp.409-414
- Publication Date
- 2007/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.2.409
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Category
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Tak-Keung LIANG, Kouichi AKAHANE, Naokatsu YAMAMOTO, Luis Romeu NUNES, Tetsuya KAWANISHI, Masahiro TSUCHIYA, "Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 2, pp. 409-414, February 2007, doi: 10.1093/ietele/e90-c.2.409.
Abstract: Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.2.409/_p
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@ARTICLE{e90-c_2_409,
author={Tak-Keung LIANG, Kouichi AKAHANE, Naokatsu YAMAMOTO, Luis Romeu NUNES, Tetsuya KAWANISHI, Masahiro TSUCHIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy},
year={2007},
volume={E90-C},
number={2},
pages={409-414},
abstract={Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.},
keywords={},
doi={10.1093/ietele/e90-c.2.409},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 409
EP - 414
AU - Tak-Keung LIANG
AU - Kouichi AKAHANE
AU - Naokatsu YAMAMOTO
AU - Luis Romeu NUNES
AU - Tetsuya KAWANISHI
AU - Masahiro TSUCHIYA
PY - 2007
DO - 10.1093/ietele/e90-c.2.409
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2007
AB - Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.
ER -
English
