A Mach-Zehnder optical modulator with the tunable multimode interference coupler was fabricated using Ti-diffused LiNbO3. The modulation extinction ratio could be voltage controlled to maximize up to 50 dB by tuning the coupler. Optical single-sideband modulation was also achieved with a sideband suppression ratio of more than 30 dB.

Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.

A new structure of the electro-optic modulator to compensate the third-order intermodulation distortion (IMD3) is introduced. The modulator includes two Mach-Zehnder modulators (MZMs) operating with frequency chirp and the two modulated outputs are combined with an adequate phase difference. We revealed by theoretical analysis and numerical calculations that the IMD3 components in the receiver output could be selectively suppressed when the two MZMs operate with chirp parameters of opposite signs to each other. Spectral power of the IMD3 components in the proposed modulator was more than 15dB lower than that in a normal Mach-Zehnder modulator at modulation index between 0.15π and 0.25π rad. The IMD3 compensation properties of the proposed modulator was experimentally confirmed by using a dual parallel Mach-Zehnder modulator (DPMZM) structure. We designed and fabricated the modulator with the single-chip structure and the single-input operation by integrating with 180° hybrid coupler on the modulator substrate. Modulation signals were applied to each modulation electrode by the 180° hybrid coupler to set the chirp parameters of two MZMs of the DPMZM. The properties of the fabricated modulator were measured by using 10GHz two-tone signals. The performance of the IMD3 compensation agreed with that in the calculation. It was confirmed that the IMD3 compensation could be realized even by the fabricated modulator structure.

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

The quantum dot optical frequency comb laser (QD-CML) is an attractive photonic device for generating a stable emission of fine multiple-wavelength peaks. In the present paper, 1.0-GHz and 10-ps-order short optical pulsation is successfully demonstrated from a hybrid mode-locked QD-CML with an ultrabroadband wavelength tuning range in the T+O band. In addition, 10-GHz high-repetition intensity-stable short optical pulse generation with a high S/N ratio is successfully demonstrated using an external-cavity QD-CML with a 10th-harmonic mode-locking technique.