A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure
Summary :
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.8 pp.878-881
- Publication Date
- 2015/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.878
- Type of Manuscript
- BRIEF PAPER
- Category
- MWP Device and Application
Authors
Naokatsu YAMAMOTO
National Institute of Information and Communications Technology (NICT)
Kouichi AKAHANE
National Institute of Information and Communications Technology (NICT)
Toshimasa UMEZAWA
National Institute of Information and Communications Technology (NICT)
Tetsuya KAWANISHI
National Institute of Information and Communications Technology (NICT)
Keyword
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Naokatsu YAMAMOTO, Kouichi AKAHANE, Toshimasa UMEZAWA, Tetsuya KAWANISHI, "A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 8, pp. 878-881, August 2015, doi: 10.1587/transele.E98.C.878.
Abstract: A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.878/_p
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@ARTICLE{e98-c_8_878,
author={Naokatsu YAMAMOTO, Kouichi AKAHANE, Toshimasa UMEZAWA, Tetsuya KAWANISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure},
year={2015},
volume={E98-C},
number={8},
pages={878-881},
abstract={A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.},
keywords={},
doi={10.1587/transele.E98.C.878},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 878
EP - 881
AU - Naokatsu YAMAMOTO
AU - Kouichi AKAHANE
AU - Toshimasa UMEZAWA
AU - Tetsuya KAWANISHI
PY - 2015
DO - 10.1587/transele.E98.C.878
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2015
AB - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
ER -
English
