We evaluated the energy efficiency per 1-bit transmission of an optical light source on InP substrate to achieve optical interconnection. A semiconductor optical amplifier (SOA) assisted extended reach EADFB laser (AXEL) was utilized as the optical light source to enhance the energy efficiency compared to the conventional electro-absorption modulator integrated with a DFB laser (EML). The AXEL has frequency bandwidth extendibility for operation of over 100Gbit/s, which is difficult when using a vertical cavity surface emitting laser (VCSEL) without an equalizer. By designing the AXEL for low power consumption, we were able to achieve 64-Gbit/s, 1.0pJ/bit and 128-Gbit/s, 1.5pJ/bit operation at 50°C with the transmitter dispersion and eye closure quaternary of 1.1dB.

We propose a novel structure that can reduce the power consumption and extend the transmission distance of an electro-absorption modulator integrated with a DFB (EADFB) laser. To overcome the trade-off relationship of the optical loss and chirp parameter of the EA modulator, we integrate a semiconductor optical amplifier (SOA) with an EADFB laser. With the proposed SOA assisted extended reach EADFB laser (AXEL) structure, the LD and SOA sections are operated by an electrically connected input port. We describe a design for AXEL that optimizes the LD and SOA length ratio when their total operation current is 80mA. By using the designed AXEL, the power consumption of a 10-Gbit/s, 1.55-µm EADFB laser is reduced by 1/2 and at the same time the transmission distance is extended from 80 to 100km.

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

We describe wavelength-routed switching technology for 25-Gbit/s optical packets using a tunable transmitter that monolithically integrates a parallel-ring-resonator tunable laser and an InGaAlAs electro-absorption modulator (EAM). The transmitter provided accurate wavelength tunability with 100-GHz spacing and small output power variation. A 25-Gbit/s burst-mode optical-packet data was encoded onto the laser output by modulating the integrated EAM with a constant voltage swing of 2 V at 45$^{circ}$C. Clear eye openings were observed at the output of the 100 GHz-spaced arrayed-waveguide grating with error-free operation being achieved for all packets. The tunable transmitter is very promising for realizing a high-speed, large-port-count and energy-efficient wavelength-routing switch that enables the forwarding of 100-Gbit/s optical packets.

Using an electro-absorption duplexer (EAD) we presented a transceiver (TRx) module for dual function of both electrical-to-optical (E/O) and optical-to-electrical (E/O) conversion at 60 GHz band. The EAD chip was fabricated by monolithically integrating both a waveguide photodiode (PD) and an electro-absorption modulator (EAM) in association with traveling wave electrodes. We also investigated the issues of RF packaging in which the optoelectronic and electronic amplifier devices were co-packaged in a single housing. The RF impedance matching was accomplished in assistance with a microstrip bandpass filter.

This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔEv at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).

Optical signal processing is one of essential technologies for improving the flexibility of all-optical network. Above all, recently there have been a lot of studies regarding all-optical 2R/3R regeneration technology. However, there are few studies about all-optical 2R/3R technologies that are carried out in field environment. In this paper, we report the successful results of field trials of an all-optical 2R regeneration system based on an electro-absorption modulator for 40-Gbit/s WDM transmission systems with optical add/drop multiplexing. It was made sure that by applying the all-optical 2R regeneration system to the optical add/drop multiplexer in the 320-km-long transmission systems the transmission characteristics of the express signal after 320-km transmission and those of the dropped signal at 160-km can be made nearly the same. It is quite important that the transmission characteristics are equal for both the dropped and express channel from a point of view of the system design, and the results in this paper suggests one possible solution for this matter.

Optical regeneration technique using an electro-absorption modulator (EAM) is reviewed. Simple 3R optical regeneration using an EAM was proposed and verified at 20 Gbit/s. The optical nonlinearities including cross-absorption modulation (XAM) and cross-phase modulation (XPM) induced in an EAM were quantitatively characterized by experiment. High bit-rate 2R type all-optical regeneration (wavelength conversion) at 100 Gbit/s was demonstrated by an EAM in conjunction with a delayed interferometer (DI) with required optical pulse energy of 1.5 pJ. It was verified that the operable bandwidth of the EAM-DI wavelength converter at 40 Gbit/s covered almost full range of C-band without tuning operation conditions.

The surface potential built across vacuum deposited phthalocyanine (Pc) films on aluminum electrode was investigated by means of electro-modulation spectroscopy. The sandwich-type cells with thin air gap, which becomes a good insulator were used in order to avoid the influence of charge injection. The existence of the surface potential at the metal/organic-material interface induced 1f referenced electro-reflectance (ER) signals. As a result, the surface potential built across vacuum deposited Pc films on aluminum electrode was estimated to be 1.25 V.