1-3hit |
Shigeru KANAZAWA Hiroshi YAMAZAKI Yuta UEDA Wataru KOBAYASHI Yoshihiro OGISO Johsuke OZAKI Takahiko SHINDO Satoshi TSUNASHIMA Hiromasa TANOBE Atsushi ARARATAKE
We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.
Wataru KOBAYASHI Shigeru KANAZAWA Takahiko SHINDO Manabu MITSUHARA Fumito NAKAJIMA
We evaluated the energy efficiency per 1-bit transmission of an optical light source on InP substrate to achieve optical interconnection. A semiconductor optical amplifier (SOA) assisted extended reach EADFB laser (AXEL) was utilized as the optical light source to enhance the energy efficiency compared to the conventional electro-absorption modulator integrated with a DFB laser (EML). The AXEL has frequency bandwidth extendibility for operation of over 100Gbit/s, which is difficult when using a vertical cavity surface emitting laser (VCSEL) without an equalizer. By designing the AXEL for low power consumption, we were able to achieve 64-Gbit/s, 1.0pJ/bit and 128-Gbit/s, 1.5pJ/bit operation at 50°C with the transmitter dispersion and eye closure quaternary of 1.1dB.
Wataru KOBAYASHI Naoki FUJIWARA Takahiko SHINDO Yoshitaka OHISO Shigeru KANAZAWA Hiroyuki ISHII Koichi HASEBE Hideaki MATSUZAKI Mikitaka ITOH
We propose a novel structure that can reduce the power consumption and extend the transmission distance of an electro-absorption modulator integrated with a DFB (EADFB) laser. To overcome the trade-off relationship of the optical loss and chirp parameter of the EA modulator, we integrate a semiconductor optical amplifier (SOA) with an EADFB laser. With the proposed SOA assisted extended reach EADFB laser (AXEL) structure, the LD and SOA sections are operated by an electrically connected input port. We describe a design for AXEL that optimizes the LD and SOA length ratio when their total operation current is 80mA. By using the designed AXEL, the power consumption of a 10-Gbit/s, 1.55-µm EADFB laser is reduced by 1/2 and at the same time the transmission distance is extended from 80 to 100km.