Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

Shinpei YAMASHITA; Michihiko SUHARA; Kenichi KAWAGUCHI; Tsuyoshi TAKAHASHI; Masaru SATO; Naoya OKAMOTO; Kiyoto ASAKAWA

doi:10.1587/transele.2018FUS0006

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA

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We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.

Publication: IEICE TRANSACTIONS on Electronics Vol.E102-C No.6 pp.462-465

Publication Date: 2019/06/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.2018FUS0006

Type of Manuscript: BRIEF PAPER

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Authors

Shinpei YAMASHITA
  Tokyo Metropolitan University
Michihiko SUHARA
  Tokyo Metropolitan University
Kenichi KAWAGUCHI
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Tsuyoshi TAKAHASHI
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Masaru SATO
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Naoya OKAMOTO
  Fujitsu Limited,Fujitsu Laboratories Ltd.
Kiyoto ASAKAWA
  Tokyo Metropolitan College of Industrial Technology

Keyword

backward diodes, GaAsSb/InGaAs, equivalent circuit, voltage sensitivity

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Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, "Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz" in IEICE TRANSACTIONS on Electronics, vol. E102-C, no. 6, pp. 462-465, June 2019, doi: 10.1587/transele.2018FUS0006.
Abstract: We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUS0006/_p

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@ARTICLE{e102-c_6_462,
author={Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz},
year={2019},
volume={E102-C},
number={6},
pages={462-465},
abstract={We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.},
keywords={},
doi={10.1587/transele.2018FUS0006},
ISSN={1745-1353},
month={June},}

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TY - JOUR
TI - Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
T2 - IEICE TRANSACTIONS on Electronics
SP - 462
EP - 465
AU - Shinpei YAMASHITA
AU - Michihiko SUHARA
AU - Kenichi KAWAGUCHI
AU - Tsuyoshi TAKAHASHI
AU - Masaru SATO
AU - Naoya OKAMOTO
AU - Kiyoto ASAKAWA
PY - 2019
DO - 10.1587/transele.2018FUS0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
ER -