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We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (*I-V*) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured *I-V*s on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear *I-V* around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of *I-V* curvature coefficient.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E102-C No.6 pp.462-465

- Publication Date
- 2019/06/01

- Publicized

- Online ISSN
- 1745-1353

- DOI
- 10.1587/transele.2018FUS0006

- Type of Manuscript
- BRIEF PAPER

- Category

Shinpei YAMASHITA

Tokyo Metropolitan University

Michihiko SUHARA

Tokyo Metropolitan University

Kenichi KAWAGUCHI

Fujitsu Limited,Fujitsu Laboratories Ltd.

Tsuyoshi TAKAHASHI

Fujitsu Limited,Fujitsu Laboratories Ltd.

Masaru SATO

Fujitsu Limited,Fujitsu Laboratories Ltd.

Naoya OKAMOTO

Fujitsu Limited,Fujitsu Laboratories Ltd.

Kiyoto ASAKAWA

Tokyo Metropolitan College of Industrial Technology

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Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, "Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 462-465, June 2019, doi: 10.1587/transele.2018FUS0006.

Abstract: We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (*I-V*) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured *I-V*s on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear *I-V* around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of *I-V* curvature coefficient.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUS0006/_p

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@ARTICLE{e102-c_6_462,

author={Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, },

journal={IEICE TRANSACTIONS on Electronics},

title={Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz},

year={2019},

volume={E102-C},

number={6},

pages={462-465},

abstract={We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (*I-V*) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured *I-V*s on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear *I-V* around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of *I-V* curvature coefficient.},

keywords={},

doi={10.1587/transele.2018FUS0006},

ISSN={1745-1353},

month={June},}

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TY - JOUR

TI - Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

T2 - IEICE TRANSACTIONS on Electronics

SP - 462

EP - 465

AU - Shinpei YAMASHITA

AU - Michihiko SUHARA

AU - Kenichi KAWAGUCHI

AU - Tsuyoshi TAKAHASHI

AU - Masaru SATO

AU - Naoya OKAMOTO

AU - Kiyoto ASAKAWA

PY - 2019

DO - 10.1587/transele.2018FUS0006

JO - IEICE TRANSACTIONS on Electronics

SN - 1745-1353

VL - E102-C

IS - 6

JA - IEICE TRANSACTIONS on Electronics

Y1 - June 2019

AB - We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (*I-V*) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured *I-V*s on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear *I-V* around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of *I-V* curvature coefficient.

ER -