Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
Summary :
We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.842-845
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.842
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Jae-Gil LEE, Chun-Hyung CHO, Ho-Young CHA, "Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 842-845, May 2011, doi: 10.1587/transele.E94.C.842.
Abstract: We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.842/_p
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@ARTICLE{e94-c_5_842,
author={Jae-Gil LEE, Chun-Hyung CHO, Ho-Young CHA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors},
year={2011},
volume={E94-C},
number={5},
pages={842-845},
abstract={We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.},
keywords={},
doi={10.1587/transele.E94.C.842},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 842
EP - 845
AU - Jae-Gil LEE
AU - Chun-Hyung CHO
AU - Ho-Young CHA
PY - 2011
DO - 10.1587/transele.E94.C.842
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
ER -
English
