Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
Summary :
We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Φm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ∼5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.846-849
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.846
- Type of Manuscript
- BRIEF PAPER
- Category
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Hoon-Ki LEE, S.V. Jagadeesh CHANDRA, Kyu-Hwan SHIM, Jong-Won YOON, Chel-Jong CHOI, "Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 846-849, May 2011, doi: 10.1587/transele.E94.C.846.
Abstract: We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Φm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ∼5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.846/_p
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@ARTICLE{e94-c_5_846,
author={Hoon-Ki LEE, S.V. Jagadeesh CHANDRA, Kyu-Hwan SHIM, Jong-Won YOON, Chel-Jong CHOI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks},
year={2011},
volume={E94-C},
number={5},
pages={846-849},
abstract={We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Φm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ∼5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.},
keywords={},
doi={10.1587/transele.E94.C.846},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
T2 - IEICE TRANSACTIONS on Electronics
SP - 846
EP - 849
AU - Hoon-Ki LEE
AU - S.V. Jagadeesh CHANDRA
AU - Kyu-Hwan SHIM
AU - Jong-Won YOON
AU - Chel-Jong CHOI
PY - 2011
DO - 10.1587/transele.E94.C.846
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Φm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ∼5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.
ER -
English
