IEICE TRANSACTIONS on Electronics
Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
Summary :
In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.850-853
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.850
- Type of Manuscript
- BRIEF PAPER
- Category
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Jong-Dae LEE, Hyun-Min SEUNG, Kyoung-Cheol KWON, Jea-Gun PARK, "Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 850-853, May 2011, doi: 10.1587/transele.E94.C.850.
Abstract: In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.850/_p
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@ARTICLE{e94-c_5_850,
author={Jong-Dae LEE, Hyun-Min SEUNG, Kyoung-Cheol KWON, Jea-Gun PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory},
year={2011},
volume={E94-C},
number={5},
pages={850-853},
abstract={In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.},
keywords={},
doi={10.1587/transele.E94.C.850},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 850
EP - 853
AU - Jong-Dae LEE
AU - Hyun-Min SEUNG
AU - Kyoung-Cheol KWON
AU - Jea-Gun PARK
PY - 2011
DO - 10.1587/transele.E94.C.850
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
ER -
English
