A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit
Summary :
This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 kΩ to 65 kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.6 pp.1128-1131
- Publication Date
- 2012/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1128
- Type of Manuscript
- BRIEF PAPER
- Category
- Integrated Electronics
Authors
Keyword
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Shyh-Shyuan SHEU, Kuo-Hsing CHENG, Yu-Sheng CHEN, Pang-Shiu CHEN, Ming-Jinn TSAI, Yu-Lung LO, "A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 6, pp. 1128-1131, June 2012, doi: 10.1587/transele.E95.C.1128.
Abstract: This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 kΩ to 65 kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1128/_p
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@ARTICLE{e95-c_6_1128,
author={Shyh-Shyuan SHEU, Kuo-Hsing CHENG, Yu-Sheng CHEN, Pang-Shiu CHEN, Ming-Jinn TSAI, Yu-Lung LO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit},
year={2012},
volume={E95-C},
number={6},
pages={1128-1131},
abstract={This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 kΩ to 65 kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.},
keywords={},
doi={10.1587/transele.E95.C.1128},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 1128
EP - 1131
AU - Shyh-Shyuan SHEU
AU - Kuo-Hsing CHENG
AU - Yu-Sheng CHEN
AU - Pang-Shiu CHEN
AU - Ming-Jinn TSAI
AU - Yu-Lung LO
PY - 2012
DO - 10.1587/transele.E95.C.1128
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2012
AB - This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25 kΩ to 65 kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.
ER -
English
