Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films
Summary :
Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.7 pp.1304-1306
- Publication Date
- 2012/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1304
- Type of Manuscript
- BRIEF PAPER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO, "Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 7, pp. 1304-1306, July 2012, doi: 10.1587/transele.E95.C.1304.
Abstract: Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1304/_p
Copy
@ARTICLE{e95-c_7_1304,
author={Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films},
year={2012},
volume={E95-C},
number={7},
pages={1304-1306},
abstract={Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.},
keywords={},
doi={10.1587/transele.E95.C.1304},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1304
EP - 1306
AU - Masahiro TAHASHI
AU - Kenji IINUMA
AU - Hideo GOTO
AU - Kenji YOSHINO
AU - Makoto TAKAHASHI
AU - Toshiyuki IDO
PY - 2012
DO - 10.1587/transele.E95.C.1304
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2012
AB - Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.
ER -
English
