Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

Maiko HATANO; Norimasa YAFUNE; Hirokuni TOKUDA; Yoshiyuki YAMAMOTO; Shin HASHIMOTO; Katsushi AKITA; Masaaki KUZUHARA

doi:10.1587/transele.E95.C.1332

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

Maiko HATANO, Norimasa YAFUNE, Hirokuni TOKUDA, Yoshiyuki YAMAMOTO, Shin HASHIMOTO, Katsushi AKITA, Masaaki KUZUHARA

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This paper describes high-temperature electron transport properties of AlGaN-channel HEMT fabricated on a free-standing AlN substrate, estimated at temperatures between 25 and 300. The AlGaN-channel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional AlGaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300. Delay time analyses suggested that the temperature dependence of the AlGaN-channel HEMT was primarily dominated by the effective electron velocity in the AlGaN channel. These results indicate that an AlGaN-channel HEMT fabricated on an AlN substrate is promising for high-performance device applications at high temperatures.

Publication: IEICE TRANSACTIONS on Electronics Vol.E95-C No.8 pp.1332-1336

Publication Date: 2012/08/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E95.C.1332

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)

Category: GaN-based Devices

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Maiko HATANO, Norimasa YAFUNE, Hirokuni TOKUDA, Yoshiyuki YAMAMOTO, Shin HASHIMOTO, Katsushi AKITA, Masaaki KUZUHARA, "Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures" in IEICE TRANSACTIONS on Electronics, vol. E95-C, no. 8, pp. 1332-1336, August 2012, doi: 10.1587/transele.E95.C.1332.
Abstract: This paper describes high-temperature electron transport properties of AlGaN-channel HEMT fabricated on a free-standing AlN substrate, estimated at temperatures between 25 and 300. The AlGaN-channel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional AlGaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300. Delay time analyses suggested that the temperature dependence of the AlGaN-channel HEMT was primarily dominated by the effective electron velocity in the AlGaN channel. These results indicate that an AlGaN-channel HEMT fabricated on an AlN substrate is promising for high-performance device applications at high temperatures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1332/_p

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@ARTICLE{e95-c_8_1332,
author={Maiko HATANO, Norimasa YAFUNE, Hirokuni TOKUDA, Yoshiyuki YAMAMOTO, Shin HASHIMOTO, Katsushi AKITA, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures},
year={2012},
volume={E95-C},
number={8},
pages={1332-1336},
abstract={This paper describes high-temperature electron transport properties of AlGaN-channel HEMT fabricated on a free-standing AlN substrate, estimated at temperatures between 25 and 300. The AlGaN-channel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional AlGaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300. Delay time analyses suggested that the temperature dependence of the AlGaN-channel HEMT was primarily dominated by the effective electron velocity in the AlGaN channel. These results indicate that an AlGaN-channel HEMT fabricated on an AlN substrate is promising for high-performance device applications at high temperatures.},
keywords={},
doi={10.1587/transele.E95.C.1332},
ISSN={1745-1353},
month={August},}

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TY - JOUR
TI - Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1332
EP - 1336
AU - Maiko HATANO
AU - Norimasa YAFUNE
AU - Hirokuni TOKUDA
AU - Yoshiyuki YAMAMOTO
AU - Shin HASHIMOTO
AU - Katsushi AKITA
AU - Masaaki KUZUHARA
PY - 2012
DO - 10.1587/transele.E95.C.1332
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - This paper describes high-temperature electron transport properties of AlGaN-channel HEMT fabricated on a free-standing AlN substrate, estimated at temperatures between 25 and 300. The AlGaN-channel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional AlGaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300. Delay time analyses suggested that the temperature dependence of the AlGaN-channel HEMT was primarily dominated by the effective electron velocity in the AlGaN channel. These results indicate that an AlGaN-channel HEMT fabricated on an AlN substrate is promising for high-performance device applications at high temperatures.
ER -