IEICE TRANSACTIONS on Electronics
Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs
Summary :
We performed the (NH4)2S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)2S treatment. The hysteresis width in ID-VGS and gm-VGS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)2S treatment was smaller than that without the (NH4)2S treatment. In addition, transconductance (gm) decrease at a large gate voltage was relaxed by the (NH4)2S treatment. We also performed ultraviolet (UV) illumination during the (NH4)2S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.8 pp.1337-1342
- Publication Date
- 2012/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1337
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
- Category
- GaN-based Devices
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Eiji MIYAZAKI, Shigeru KISHIMOTO, Takashi MIZUTANI, "Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 8, pp. 1337-1342, August 2012, doi: 10.1587/transele.E95.C.1337.
Abstract: We performed the (NH4)2S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)2S treatment. The hysteresis width in ID-VGS and gm-VGS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)2S treatment was smaller than that without the (NH4)2S treatment. In addition, transconductance (gm) decrease at a large gate voltage was relaxed by the (NH4)2S treatment. We also performed ultraviolet (UV) illumination during the (NH4)2S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1337/_p
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@ARTICLE{e95-c_8_1337,
author={Eiji MIYAZAKI, Shigeru KISHIMOTO, Takashi MIZUTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs},
year={2012},
volume={E95-C},
number={8},
pages={1337-1342},
abstract={We performed the (NH4)2S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)2S treatment. The hysteresis width in ID-VGS and gm-VGS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)2S treatment was smaller than that without the (NH4)2S treatment. In addition, transconductance (gm) decrease at a large gate voltage was relaxed by the (NH4)2S treatment. We also performed ultraviolet (UV) illumination during the (NH4)2S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination.},
keywords={},
doi={10.1587/transele.E95.C.1337},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1337
EP - 1342
AU - Eiji MIYAZAKI
AU - Shigeru KISHIMOTO
AU - Takashi MIZUTANI
PY - 2012
DO - 10.1587/transele.E95.C.1337
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - We performed the (NH4)2S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)2S treatment. The hysteresis width in ID-VGS and gm-VGS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)2S treatment was smaller than that without the (NH4)2S treatment. In addition, transconductance (gm) decrease at a large gate voltage was relaxed by the (NH4)2S treatment. We also performed ultraviolet (UV) illumination during the (NH4)2S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination.
ER -
English
