This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 500
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Chul Bum KIM, Doo Hyung WOO, Hee Chul LEE, "Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 8, pp. 1406-1414, August 2012, doi: 10.1587/transele.E95.C.1406.
Abstract: This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 500
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1406/_p
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@ARTICLE{e95-c_8_1406,
author={Chul Bum KIM, Doo Hyung WOO, Hee Chul LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays},
year={2012},
volume={E95-C},
number={8},
pages={1406-1414},
abstract={This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 500
keywords={},
doi={10.1587/transele.E95.C.1406},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays
T2 - IEICE TRANSACTIONS on Electronics
SP - 1406
EP - 1414
AU - Chul Bum KIM
AU - Doo Hyung WOO
AU - Hee Chul LEE
PY - 2012
DO - 10.1587/transele.E95.C.1406
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 500
ER -