A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis
Summary :
A laser irradiation experiment for photocurrent induced failure investigations was described. In order to focus a laser beam on a desired transistor, novel test circuit structures using selectively metal-covered transistors were proposed. Photocurrent induced upset failures were successfully observed in fabricated CMOS SRAM test cells. Results were discussed with SPICE simulations.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.11 pp.1827-1829
- Publication Date
- 2012/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1827
- Type of Manuscript
- BRIEF PAPER
- Category
- Electronic Circuits
Authors
Keyword
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Hiroshi HATANO, "A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 11, pp. 1827-1829, November 2012, doi: 10.1587/transele.E95.C.1827.
Abstract: A laser irradiation experiment for photocurrent induced failure investigations was described. In order to focus a laser beam on a desired transistor, novel test circuit structures using selectively metal-covered transistors were proposed. Photocurrent induced upset failures were successfully observed in fabricated CMOS SRAM test cells. Results were discussed with SPICE simulations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1827/_p
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@ARTICLE{e95-c_11_1827,
author={Hiroshi HATANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis},
year={2012},
volume={E95-C},
number={11},
pages={1827-1829},
abstract={A laser irradiation experiment for photocurrent induced failure investigations was described. In order to focus a laser beam on a desired transistor, novel test circuit structures using selectively metal-covered transistors were proposed. Photocurrent induced upset failures were successfully observed in fabricated CMOS SRAM test cells. Results were discussed with SPICE simulations.},
keywords={},
doi={10.1587/transele.E95.C.1827},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - A CMOS SRAM Test Cell Design Using Selectively Metal-Covered Transistors for a Laser Irradiation Failure Analysis
T2 - IEICE TRANSACTIONS on Electronics
SP - 1827
EP - 1829
AU - Hiroshi HATANO
PY - 2012
DO - 10.1587/transele.E95.C.1827
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2012
AB - A laser irradiation experiment for photocurrent induced failure investigations was described. In order to focus a laser beam on a desired transistor, novel test circuit structures using selectively metal-covered transistors were proposed. Photocurrent induced upset failures were successfully observed in fabricated CMOS SRAM test cells. Results were discussed with SPICE simulations.
ER -
English
