Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN

Md. Mottaleb HOSSAIN; Md. Abdullah-AL HUMAYUN; Md. Tanvir HASAN; Ashraful Ghani BHUIYAN; Akihiro HASHIMOTO; Akio YAMAMOTO

doi:10.1587/transele.E95.C.255

Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN

Md. Mottaleb HOSSAIN, Md. Abdullah-AL HUMAYUN, Md. Tanvir HASAN, Ashraful Ghani BHUIYAN, Akihiro HASHIMOTO, Akio YAMAMOTO

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This paper reports on a theoretical study and modeling of a 1.55 µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transition energy, threshold current density, modal gain, and differential quantum efficiency are presented considering a single layer of quantum dots. Dependence of threshold current density on the RMS value of quantum dot size fluctuations and the cavity length is studied. A low threshold current density of ∼51 Acm^-2 is achieved at room temperature for a cavity length of 640 µm. An external differential efficiency of ∼65% and a modal gain of ∼12.5 cm^-1 are obtained for the proposed structure. The results indicate that the InN based quantum dot laser is a promising one for the optical communication system.

Publication: IEICE TRANSACTIONS on Electronics Vol.E95-C No.2 pp.255-261

Publication Date: 2012/02/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E95.C.255

Type of Manuscript: PAPER

Category: Lasers, Quantum Electronics

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Md. Mottaleb HOSSAIN, Md. Abdullah-AL HUMAYUN, Md. Tanvir HASAN, Ashraful Ghani BHUIYAN, Akihiro HASHIMOTO, Akio YAMAMOTO, "Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN" in IEICE TRANSACTIONS on Electronics, vol. E95-C, no. 2, pp. 255-261, February 2012, doi: 10.1587/transele.E95.C.255.
Abstract: This paper reports on a theoretical study and modeling of a 1.55 µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transition energy, threshold current density, modal gain, and differential quantum efficiency are presented considering a single layer of quantum dots. Dependence of threshold current density on the RMS value of quantum dot size fluctuations and the cavity length is studied. A low threshold current density of ∼51 Acm^-2 is achieved at room temperature for a cavity length of 640 µm. An external differential efficiency of ∼65% and a modal gain of ∼12.5 cm^-1 are obtained for the proposed structure. The results indicate that the InN based quantum dot laser is a promising one for the optical communication system.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.255/_p

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@ARTICLE{e95-c_2_255,
author={Md. Mottaleb HOSSAIN, Md. Abdullah-AL HUMAYUN, Md. Tanvir HASAN, Ashraful Ghani BHUIYAN, Akihiro HASHIMOTO, Akio YAMAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN},
year={2012},
volume={E95-C},
number={2},
pages={255-261},
abstract={This paper reports on a theoretical study and modeling of a 1.55 µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transition energy, threshold current density, modal gain, and differential quantum efficiency are presented considering a single layer of quantum dots. Dependence of threshold current density on the RMS value of quantum dot size fluctuations and the cavity length is studied. A low threshold current density of ∼51 Acm^-2 is achieved at room temperature for a cavity length of 640 µm. An external differential efficiency of ∼65% and a modal gain of ∼12.5 cm^-1 are obtained for the proposed structure. The results indicate that the InN based quantum dot laser is a promising one for the optical communication system.},
keywords={},
doi={10.1587/transele.E95.C.255},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN
T2 - IEICE TRANSACTIONS on Electronics
SP - 255
EP - 261
AU - Md. Mottaleb HOSSAIN
AU - Md. Abdullah-AL HUMAYUN
AU - Md. Tanvir HASAN
AU - Ashraful Ghani BHUIYAN
AU - Akihiro HASHIMOTO
AU - Akio YAMAMOTO
PY - 2012
DO - 10.1587/transele.E95.C.255
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2012
AB - This paper reports on a theoretical study and modeling of a 1.55 µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transition energy, threshold current density, modal gain, and differential quantum efficiency are presented considering a single layer of quantum dots. Dependence of threshold current density on the RMS value of quantum dot size fluctuations and the cavity length is studied. A low threshold current density of ∼51 Acm^-2 is achieved at room temperature for a cavity length of 640 µm. An external differential efficiency of ∼65% and a modal gain of ∼12.5 cm^-1 are obtained for the proposed structure. The results indicate that the InN based quantum dot laser is a promising one for the optical communication system.
ER -