IEICE TRANSACTIONS on Electronics
FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)
Summary :
Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10 nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.891-897
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.891
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Moon-Sik SEO, Tetsuo ENDOH, "FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 891-897, May 2012, doi: 10.1587/transele.E95.C.891.
Abstract: Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10 nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.891/_p
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@ARTICLE{e95-c_5_891,
author={Moon-Sik SEO, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)},
year={2012},
volume={E95-C},
number={5},
pages={891-897},
abstract={Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10 nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.},
keywords={},
doi={10.1587/transele.E95.C.891},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)
T2 - IEICE TRANSACTIONS on Electronics
SP - 891
EP - 897
AU - Moon-Sik SEO
AU - Tetsuo ENDOH
PY - 2012
DO - 10.1587/transele.E95.C.891
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10 nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.
ER -
English
