Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
Summary :
The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.914-916
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.914
- Type of Manuscript
- BRIEF PAPER
- Category
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Boram HAN, Woo Young CHOI, "Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 914-916, May 2012, doi: 10.1587/transele.E95.C.914.
Abstract: The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.914/_p
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@ARTICLE{e95-c_5_914,
author={Boram HAN, Woo Young CHOI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells},
year={2012},
volume={E95-C},
number={5},
pages={914-916},
abstract={The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.},
keywords={},
doi={10.1587/transele.E95.C.914},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
T2 - IEICE TRANSACTIONS on Electronics
SP - 914
EP - 916
AU - Boram HAN
AU - Woo Young CHOI
PY - 2012
DO - 10.1587/transele.E95.C.914
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.
ER -
English
