S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications

Yuta KOBAYASHI; Satoshi YOSHIDA; Zen-ichi YAMAMOTO; Shigeo KAWASAKI

doi:10.1587/transele.E96.C.1245

S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications

Yuta KOBAYASHI, Satoshi YOSHIDA, Zen-ichi YAMAMOTO, Shigeo KAWASAKI

Full Text Views

0

Cite this

Summary :

An S-band GaN on Si based 1kW-class SSPA system for space wireless applications is proposed. Since high-efficiency and high-reliability amplifier is one of the most important technologies for power and communication systems in a future space base station on a planet, compact, high-power, and high-efficiency SSPA is strongly requested instead of TWTA. Thus, we adopt GaN on Si based amplifier due to its remarkable material properties. At the beginning, thermal vacuum and radiation test of GaN on Si are conducted so as to confirm the space applicability. Fabricated SSPA system consists of eight 200W HPAs and coaxial waveguide power combiner. It achieves high efficiency such as 57% of drain efficiency and 87% of combining efficiency when RF output power achieves more than 60dBm. Furthermore, long-term stable operation and good phase noise characteristics are also confirmed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E96-C No.10 pp.1245-1253

Publication Date: 2013/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E96.C.1245

Type of Manuscript: Special Section PAPER (Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems)

Category

Cite this

Copy

Yuta KOBAYASHI, Satoshi YOSHIDA, Zen-ichi YAMAMOTO, Shigeo KAWASAKI, "S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications" in IEICE TRANSACTIONS on Electronics, vol. E96-C, no. 10, pp. 1245-1253, October 2013, doi: 10.1587/transele.E96.C.1245.
Abstract: An S-band GaN on Si based 1kW-class SSPA system for space wireless applications is proposed. Since high-efficiency and high-reliability amplifier is one of the most important technologies for power and communication systems in a future space base station on a planet, compact, high-power, and high-efficiency SSPA is strongly requested instead of TWTA. Thus, we adopt GaN on Si based amplifier due to its remarkable material properties. At the beginning, thermal vacuum and radiation test of GaN on Si are conducted so as to confirm the space applicability. Fabricated SSPA system consists of eight 200W HPAs and coaxial waveguide power combiner. It achieves high efficiency such as 57% of drain efficiency and 87% of combining efficiency when RF output power achieves more than 60dBm. Furthermore, long-term stable operation and good phase noise characteristics are also confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.1245/_p

Copy

@ARTICLE{e96-c_10_1245,
author={Yuta KOBAYASHI, Satoshi YOSHIDA, Zen-ichi YAMAMOTO, Shigeo KAWASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications},
year={2013},
volume={E96-C},
number={10},
pages={1245-1253},
abstract={An S-band GaN on Si based 1kW-class SSPA system for space wireless applications is proposed. Since high-efficiency and high-reliability amplifier is one of the most important technologies for power and communication systems in a future space base station on a planet, compact, high-power, and high-efficiency SSPA is strongly requested instead of TWTA. Thus, we adopt GaN on Si based amplifier due to its remarkable material properties. At the beginning, thermal vacuum and radiation test of GaN on Si are conducted so as to confirm the space applicability. Fabricated SSPA system consists of eight 200W HPAs and coaxial waveguide power combiner. It achieves high efficiency such as 57% of drain efficiency and 87% of combining efficiency when RF output power achieves more than 60dBm. Furthermore, long-term stable operation and good phase noise characteristics are also confirmed.},
keywords={},
doi={10.1587/transele.E96.C.1245},
ISSN={1745-1353},
month={October},}

Copy

TY - JOUR
TI - S-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1245
EP - 1253
AU - Yuta KOBAYASHI
AU - Satoshi YOSHIDA
AU - Zen-ichi YAMAMOTO
AU - Shigeo KAWASAKI
PY - 2013
DO - 10.1587/transele.E96.C.1245
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2013
AB - An S-band GaN on Si based 1kW-class SSPA system for space wireless applications is proposed. Since high-efficiency and high-reliability amplifier is one of the most important technologies for power and communication systems in a future space base station on a planet, compact, high-power, and high-efficiency SSPA is strongly requested instead of TWTA. Thus, we adopt GaN on Si based amplifier due to its remarkable material properties. At the beginning, thermal vacuum and radiation test of GaN on Si are conducted so as to confirm the space applicability. Fabricated SSPA system consists of eight 200W HPAs and coaxial waveguide power combiner. It achieves high efficiency such as 57% of drain efficiency and 87% of combining efficiency when RF output power achieves more than 60dBm. Furthermore, long-term stable operation and good phase noise characteristics are also confirmed.
ER -