IEICE TRANSACTIONS on Electronics
A High Performance Current Latch Sense Amplifier with Vertical MOSFET
Summary :
In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.5 pp.655-662
- Publication Date
- 2013/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.655
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Hyoungjun NA, Tetsuo ENDOH, "A High Performance Current Latch Sense Amplifier with Vertical MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 5, pp. 655-662, May 2013, doi: 10.1587/transele.E96.C.655.
Abstract: In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.655/_p
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@ARTICLE{e96-c_5_655,
author={Hyoungjun NA, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High Performance Current Latch Sense Amplifier with Vertical MOSFET},
year={2013},
volume={E96-C},
number={5},
pages={655-662},
abstract={In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.},
keywords={},
doi={10.1587/transele.E96.C.655},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - A High Performance Current Latch Sense Amplifier with Vertical MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 655
EP - 662
AU - Hyoungjun NA
AU - Tetsuo ENDOH
PY - 2013
DO - 10.1587/transele.E96.C.655
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2013
AB - In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.
ER -
English
