As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and O3. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300
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Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI, "Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 5, pp. 674-679, May 2013, doi: 10.1587/transele.E96.C.674.
Abstract: As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and O3. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.674/_p
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@ARTICLE{e96-c_5_674,
author={Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer},
year={2013},
volume={E96-C},
number={5},
pages={674-679},
abstract={As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and O3. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300
keywords={},
doi={10.1587/transele.E96.C.674},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 674
EP - 679
AU - Kuniaki HASHIMOTO
AU - Akio OHTA
AU - Hideki MURAKAMI
AU - Seiichiro HIGASHI
AU - Seiichi MIYAZAKI
PY - 2013
DO - 10.1587/transele.E96.C.674
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2013
AB - As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and O3. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300
ER -