IEICE TRANSACTIONS on Electronics
Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Summary :
We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.5 pp.708-713
- Publication Date
- 2013/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.708
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Motoki FUKUSIMA, Akio OHTA, Katsunori MAKIHARA, Seiichi MIYAZAKI, "Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 5, pp. 708-713, May 2013, doi: 10.1587/transele.E96.C.708.
Abstract: We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.708/_p
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@ARTICLE{e96-c_5_708,
author={Motoki FUKUSIMA, Akio OHTA, Katsunori MAKIHARA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System},
year={2013},
volume={E96-C},
number={5},
pages={708-713},
abstract={We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.},
keywords={},
doi={10.1587/transele.E96.C.708},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
T2 - IEICE TRANSACTIONS on Electronics
SP - 708
EP - 713
AU - Motoki FUKUSIMA
AU - Akio OHTA
AU - Katsunori MAKIHARA
AU - Seiichi MIYAZAKI
PY - 2013
DO - 10.1587/transele.E96.C.708
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2013
AB - We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.
ER -
English
