IEICE TRANSACTIONS on Electronics
Open Access
Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
-
Full Text Views
23
- Cite this
- Free PDF (2.3MB)
Summary :
We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.11 pp.1068-1073
- Publication Date
- 2014/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.1068
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
- Category
Authors
Jun TAYA
Ryukoku University
Kazuki KOJIMA
Ryukoku University
Tomonori MUKUDA
Ryukoku University
Akihiro NAKASHIMA
Ryukoku University
Yuki SAGAWA
Ryukoku University
Tokiyoshi MATSUDA
Ryukoku University
Mutsumi KIMURA
Ryukoku University
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Jun TAYA, Kazuki KOJIMA, Tomonori MUKUDA, Akihiro NAKASHIMA, Yuki SAGAWA, Tokiyoshi MATSUDA, Mutsumi KIMURA, "Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 11, pp. 1068-1073, November 2014, doi: 10.1587/transele.E97.C.1068.
Abstract: We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.1068/_p
Copy
@ARTICLE{e97-c_11_1068,
author={Jun TAYA, Kazuki KOJIMA, Tomonori MUKUDA, Akihiro NAKASHIMA, Yuki SAGAWA, Tokiyoshi MATSUDA, Mutsumi KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures},
year={2014},
volume={E97-C},
number={11},
pages={1068-1073},
abstract={We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.},
keywords={},
doi={10.1587/transele.E97.C.1068},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1068
EP - 1073
AU - Jun TAYA
AU - Kazuki KOJIMA
AU - Tomonori MUKUDA
AU - Akihiro NAKASHIMA
AU - Yuki SAGAWA
AU - Tokiyoshi MATSUDA
AU - Mutsumi KIMURA
PY - 2014
DO - 10.1587/transele.E97.C.1068
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2014
AB - We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.
ER -
English
