Amplification characteristics of the signal and the noise in the semiconductor optical amplifier (SOA), without facet mirrors for the intensity modulated light, are theoretically analyzed and experimentally confirmed. We have found that the amplification factor of the temporarily varying intensity component is smaller than that of the continuous wave (CW) component, but increases up to that of the CW component in the high frequency region in the SOA. These properties are very peculiar in the SOA, which is not shown in conventional electronic devices and semiconductor lasers. Therefore, the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification by the SOA. On the other hand, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation have both cases of the degradation and the improvement by the amplification depending on combination of the modulation and the noise frequencies. Experimental confirmations of these peculiar characteristics are also demonstrated.
Kazuki HIGUCHI
Kanazawa University
Nobuhito TAKEUCHI
Kanazawa University
Minoru YAMADA
Kanazawa University
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Kazuki HIGUCHI, Nobuhito TAKEUCHI, Minoru YAMADA, "Peculiar Characteristics of Amplification and Noise for Intensity Modulated Light in Semiconductor Optical Amplifier" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 11, pp. 1093-1103, November 2014, doi: 10.1587/transele.E97.C.1093.
Abstract: Amplification characteristics of the signal and the noise in the semiconductor optical amplifier (SOA), without facet mirrors for the intensity modulated light, are theoretically analyzed and experimentally confirmed. We have found that the amplification factor of the temporarily varying intensity component is smaller than that of the continuous wave (CW) component, but increases up to that of the CW component in the high frequency region in the SOA. These properties are very peculiar in the SOA, which is not shown in conventional electronic devices and semiconductor lasers. Therefore, the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification by the SOA. On the other hand, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation have both cases of the degradation and the improvement by the amplification depending on combination of the modulation and the noise frequencies. Experimental confirmations of these peculiar characteristics are also demonstrated.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.1093/_p
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@ARTICLE{e97-c_11_1093,
author={Kazuki HIGUCHI, Nobuhito TAKEUCHI, Minoru YAMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Peculiar Characteristics of Amplification and Noise for Intensity Modulated Light in Semiconductor Optical Amplifier},
year={2014},
volume={E97-C},
number={11},
pages={1093-1103},
abstract={Amplification characteristics of the signal and the noise in the semiconductor optical amplifier (SOA), without facet mirrors for the intensity modulated light, are theoretically analyzed and experimentally confirmed. We have found that the amplification factor of the temporarily varying intensity component is smaller than that of the continuous wave (CW) component, but increases up to that of the CW component in the high frequency region in the SOA. These properties are very peculiar in the SOA, which is not shown in conventional electronic devices and semiconductor lasers. Therefore, the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification by the SOA. On the other hand, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation have both cases of the degradation and the improvement by the amplification depending on combination of the modulation and the noise frequencies. Experimental confirmations of these peculiar characteristics are also demonstrated.},
keywords={},
doi={10.1587/transele.E97.C.1093},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Peculiar Characteristics of Amplification and Noise for Intensity Modulated Light in Semiconductor Optical Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 1093
EP - 1103
AU - Kazuki HIGUCHI
AU - Nobuhito TAKEUCHI
AU - Minoru YAMADA
PY - 2014
DO - 10.1587/transele.E97.C.1093
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2014
AB - Amplification characteristics of the signal and the noise in the semiconductor optical amplifier (SOA), without facet mirrors for the intensity modulated light, are theoretically analyzed and experimentally confirmed. We have found that the amplification factor of the temporarily varying intensity component is smaller than that of the continuous wave (CW) component, but increases up to that of the CW component in the high frequency region in the SOA. These properties are very peculiar in the SOA, which is not shown in conventional electronic devices and semiconductor lasers. Therefore, the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification by the SOA. On the other hand, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation have both cases of the degradation and the improvement by the amplification depending on combination of the modulation and the noise frequencies. Experimental confirmations of these peculiar characteristics are also demonstrated.
ER -