Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics

Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M. R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA

doi:10.1587/transele.E97.C.227

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Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics

Ryoichi ISHIHARA, Jin ZHANG, Miki TRIFUNOVIC, Jaber DERAKHSHANDEH, Negin GOLSHANI, Daniel M. R. TAJARI MOFRAD, Tao CHEN, Kees BEENAKKER, Tatsuya SHIMODA

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We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are formed on predetermined positions. Using the method called µ-Czochralski process and LPCVD a-Si precursor film, two layers of the SG Si TFT layers with the grains having a diameter of 6µm were vertically stacked with a maximum process temperature of 550°C. Mobility for electrons and holes were 600cm²/Vs and 200cm²/Vs, respectively. As a demonstration of monolithic 3D-ICs, the two SG-TFT layers were successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. The SG Si TFTs were applied to flexible electronics. In this case, the a-Si precursor was prepared by doctor-blade coating of liquid-Si based on pure cyclopentasilane (CPS) on a polyimide (PI) substrate with maximum process temperature of 350°C. The µ-Czochralski process provided location-controlled Si grains with a diameter of 3µm and mobilities of 460 and 121cm²/Vs for electrons and holes, respectively, were obtained. The devices on PI were transferred to a plastic foil which can operate with a bending diameter of 6mm. Those results indicate that the SG TFTs are attractive for their use in both monolithic 3D-ICs and flexible electronics.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.4 pp.227-237

Publication Date: 2014/04/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.227

Type of Manuscript: Special Section INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)

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Authors

Ryoichi ISHIHARA
  Delft University of Technology
Jin ZHANG
  Delft University of Technology
Miki TRIFUNOVIC
  Delft University of Technology
Jaber DERAKHSHANDEH
  Delft University of Technology
Negin GOLSHANI
  Delft University of Technology
Daniel M. R. TAJARI MOFRAD
  Delft University of Technology
Tao CHEN
  Delft University of Technology
Kees BEENAKKER
  Delft University of Technology
Tatsuya SHIMODA
  Japan Advanced Institute of Science and Technology,Japan Science and Technology Agency

Keyword

silicon, thin-film transistor, 3D-ICs, excimer-laser, crystallization, SRAM, image sensor, flexible electronics

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Ryoichi ISHIHARA, Jin ZHANG, Miki TRIFUNOVIC, Jaber DERAKHSHANDEH, Negin GOLSHANI, Daniel M. R. TAJARI MOFRAD, Tao CHEN, Kees BEENAKKER, Tatsuya SHIMODA, "Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 4, pp. 227-237, April 2014, doi: 10.1587/transele.E97.C.227.
Abstract: We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are formed on predetermined positions. Using the method called µ-Czochralski process and LPCVD a-Si precursor film, two layers of the SG Si TFT layers with the grains having a diameter of 6µm were vertically stacked with a maximum process temperature of 550°C. Mobility for electrons and holes were 600cm²/Vs and 200cm²/Vs, respectively. As a demonstration of monolithic 3D-ICs, the two SG-TFT layers were successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. The SG Si TFTs were applied to flexible electronics. In this case, the a-Si precursor was prepared by doctor-blade coating of liquid-Si based on pure cyclopentasilane (CPS) on a polyimide (PI) substrate with maximum process temperature of 350°C. The µ-Czochralski process provided location-controlled Si grains with a diameter of 3µm and mobilities of 460 and 121cm²/Vs for electrons and holes, respectively, were obtained. The devices on PI were transferred to a plastic foil which can operate with a bending diameter of 6mm. Those results indicate that the SG TFTs are attractive for their use in both monolithic 3D-ICs and flexible electronics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.227/_p

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@ARTICLE{e97-c_4_227,
author={Ryoichi ISHIHARA, Jin ZHANG, Miki TRIFUNOVIC, Jaber DERAKHSHANDEH, Negin GOLSHANI, Daniel M. R. TAJARI MOFRAD, Tao CHEN, Kees BEENAKKER, Tatsuya SHIMODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics},
year={2014},
volume={E97-C},
number={4},
pages={227-237},
abstract={We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are formed on predetermined positions. Using the method called µ-Czochralski process and LPCVD a-Si precursor film, two layers of the SG Si TFT layers with the grains having a diameter of 6µm were vertically stacked with a maximum process temperature of 550°C. Mobility for electrons and holes were 600cm²/Vs and 200cm²/Vs, respectively. As a demonstration of monolithic 3D-ICs, the two SG-TFT layers were successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. The SG Si TFTs were applied to flexible electronics. In this case, the a-Si precursor was prepared by doctor-blade coating of liquid-Si based on pure cyclopentasilane (CPS) on a polyimide (PI) substrate with maximum process temperature of 350°C. The µ-Czochralski process provided location-controlled Si grains with a diameter of 3µm and mobilities of 460 and 121cm²/Vs for electrons and holes, respectively, were obtained. The devices on PI were transferred to a plastic foil which can operate with a bending diameter of 6mm. Those results indicate that the SG TFTs are attractive for their use in both monolithic 3D-ICs and flexible electronics.},
keywords={},
doi={10.1587/transele.E97.C.227},
ISSN={1745-1353},
month={April},}

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TY - JOUR
TI - Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics
T2 - IEICE TRANSACTIONS on Electronics
SP - 227
EP - 237
AU - Ryoichi ISHIHARA
AU - Jin ZHANG
AU - Miki TRIFUNOVIC
AU - Jaber DERAKHSHANDEH
AU - Negin GOLSHANI
AU - Daniel M. R. TAJARI MOFRAD
AU - Tao CHEN
AU - Kees BEENAKKER
AU - Tatsuya SHIMODA
PY - 2014
DO - 10.1587/transele.E97.C.227
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2014
AB - We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are formed on predetermined positions. Using the method called µ-Czochralski process and LPCVD a-Si precursor film, two layers of the SG Si TFT layers with the grains having a diameter of 6µm were vertically stacked with a maximum process temperature of 550°C. Mobility for electrons and holes were 600cm²/Vs and 200cm²/Vs, respectively. As a demonstration of monolithic 3D-ICs, the two SG-TFT layers were successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. The SG Si TFTs were applied to flexible electronics. In this case, the a-Si precursor was prepared by doctor-blade coating of liquid-Si based on pure cyclopentasilane (CPS) on a polyimide (PI) substrate with maximum process temperature of 350°C. The µ-Czochralski process provided location-controlled Si grains with a diameter of 3µm and mobilities of 460 and 121cm²/Vs for electrons and holes, respectively, were obtained. The devices on PI were transferred to a plastic foil which can operate with a bending diameter of 6mm. Those results indicate that the SG TFTs are attractive for their use in both monolithic 3D-ICs and flexible electronics.
ER -