A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
Summary :
A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8dBm, and IMD3 better than -35dBc with a PAE of 25.1%, for a maximum output power of 10.25dBm at 1.9GHz. A PAE of more than 60% was achieved from 1.87 to 1.98GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.1 pp.58-64
- Publication Date
- 2014/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.58
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Yuki TAKAGI
The University of Electro-Communica-tions
Yoichiro TAKAYAMA
The University of Electro-Communica-tions
Ryo ISHIKAWA
The University of Electro-Communica-tions
Kazuhiko HONJO
The University of Electro-Communica-tions
Keyword
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Yuki TAKAGI, Yoichiro TAKAYAMA, Ryo ISHIKAWA, Kazuhiko HONJO, "A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 1, pp. 58-64, January 2014, doi: 10.1587/transele.E97.C.58.
Abstract: A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8dBm, and IMD3 better than -35dBc with a PAE of 25.1%, for a maximum output power of 10.25dBm at 1.9GHz. A PAE of more than 60% was achieved from 1.87 to 1.98GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.58/_p
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@ARTICLE{e97-c_1_58,
author={Yuki TAKAGI, Yoichiro TAKAYAMA, Ryo ISHIKAWA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs},
year={2014},
volume={E97-C},
number={1},
pages={58-64},
abstract={A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8dBm, and IMD3 better than -35dBc with a PAE of 25.1%, for a maximum output power of 10.25dBm at 1.9GHz. A PAE of more than 60% was achieved from 1.87 to 1.98GHz.},
keywords={},
doi={10.1587/transele.E97.C.58},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 58
EP - 64
AU - Yuki TAKAGI
AU - Yoichiro TAKAYAMA
AU - Ryo ISHIKAWA
AU - Kazuhiko HONJO
PY - 2014
DO - 10.1587/transele.E97.C.58
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2014
AB - A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8dBm, and IMD3 better than -35dBc with a PAE of 25.1%, for a maximum output power of 10.25dBm at 1.9GHz. A PAE of more than 60% was achieved from 1.87 to 1.98GHz.
ER -
English
