InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate
Summary :
In this work, a gate-all-around (GAA) tunneling field-effect transistor (TFET) with InGaAs/Si heterojunction for high-performance and low-standby power operations is studied. Gallium (Ga) compositon (x) in In1-xGaxAs source substantially affects the physical properties related with device performances including lattice constant, bandgap energy, effective tunneling mass, channel mobility, and others. Thus, it is worthy investigating the effect of Ga fraction on performances of the proposed heterojunction TFET. For this goal, the device design and its performance evaluation are carried out by technology computer-aided design (TCAD). Direct-current (DC) performances are investigated in terms of on-state current (Ion), off-state current (Ioff), current ratio (Ion/Ioff), and subthreshold swing (S). Furthermore, it is shown that the device with an n-type Si insertion layer between source and channel demonstrates the enhanced DC characteristics.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.7 pp.677-682
- Publication Date
- 2014/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.677
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Advances in Simulation Techniques and Their Applications for Electronics)
- Category
Authors
Sung YUN WOO
Kyungpook National University
Young JUN YOON
Kyungpook National University
Jae HWA SEO
Kyungpook National University
Gwan MIN YOO
Kyungpook National University
Seongjae CHO
Gachon University
In MAN KANG
Kyungpook National University
Keyword
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Sung YUN WOO, Young JUN YOON, Jae HWA SEO, Gwan MIN YOO, Seongjae CHO, In MAN KANG, "InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 7, pp. 677-682, July 2014, doi: 10.1587/transele.E97.C.677.
Abstract: In this work, a gate-all-around (GAA) tunneling field-effect transistor (TFET) with InGaAs/Si heterojunction for high-performance and low-standby power operations is studied. Gallium (Ga) compositon (x) in In1-xGaxAs source substantially affects the physical properties related with device performances including lattice constant, bandgap energy, effective tunneling mass, channel mobility, and others. Thus, it is worthy investigating the effect of Ga fraction on performances of the proposed heterojunction TFET. For this goal, the device design and its performance evaluation are carried out by technology computer-aided design (TCAD). Direct-current (DC) performances are investigated in terms of on-state current (Ion), off-state current (Ioff), current ratio (Ion/Ioff), and subthreshold swing (S). Furthermore, it is shown that the device with an n-type Si insertion layer between source and channel demonstrates the enhanced DC characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.677/_p
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@ARTICLE{e97-c_7_677,
author={Sung YUN WOO, Young JUN YOON, Jae HWA SEO, Gwan MIN YOO, Seongjae CHO, In MAN KANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate},
year={2014},
volume={E97-C},
number={7},
pages={677-682},
abstract={In this work, a gate-all-around (GAA) tunneling field-effect transistor (TFET) with InGaAs/Si heterojunction for high-performance and low-standby power operations is studied. Gallium (Ga) compositon (x) in In1-xGaxAs source substantially affects the physical properties related with device performances including lattice constant, bandgap energy, effective tunneling mass, channel mobility, and others. Thus, it is worthy investigating the effect of Ga fraction on performances of the proposed heterojunction TFET. For this goal, the device design and its performance evaluation are carried out by technology computer-aided design (TCAD). Direct-current (DC) performances are investigated in terms of on-state current (Ion), off-state current (Ioff), current ratio (Ion/Ioff), and subthreshold swing (S). Furthermore, it is shown that the device with an n-type Si insertion layer between source and channel demonstrates the enhanced DC characteristics.},
keywords={},
doi={10.1587/transele.E97.C.677},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 677
EP - 682
AU - Sung YUN WOO
AU - Young JUN YOON
AU - Jae HWA SEO
AU - Gwan MIN YOO
AU - Seongjae CHO
AU - In MAN KANG
PY - 2014
DO - 10.1587/transele.E97.C.677
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2014
AB - In this work, a gate-all-around (GAA) tunneling field-effect transistor (TFET) with InGaAs/Si heterojunction for high-performance and low-standby power operations is studied. Gallium (Ga) compositon (x) in In1-xGaxAs source substantially affects the physical properties related with device performances including lattice constant, bandgap energy, effective tunneling mass, channel mobility, and others. Thus, it is worthy investigating the effect of Ga fraction on performances of the proposed heterojunction TFET. For this goal, the device design and its performance evaluation are carried out by technology computer-aided design (TCAD). Direct-current (DC) performances are investigated in terms of on-state current (Ion), off-state current (Ioff), current ratio (Ion/Ioff), and subthreshold swing (S). Furthermore, it is shown that the device with an n-type Si insertion layer between source and channel demonstrates the enhanced DC characteristics.
ER -
English
