IEICE TRANSACTIONS on Electronics
Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter
Summary :
The field electron emission characteristics of a p-type Si emitter sharpened by a spirally scanned Ga focused-ion-beam milling process were investigated. Saturated Fowler–Nordheim (F–N) plots, which are unique phenomena of p-type semiconductor emitters, were observed. The slight increase of the emission current in the saturated F–N plots region was discussed in terms of the depletion layer width in which electron generation occurs. The temperature dependence of the field electron emission current was also discussed. The activation energy of carrier generation was determined to be 0.26 eV, ascribable to the surface states that accompany the defects introduced by the Ga ion beam. When the emitter was irradiated by a 650-nm-wavelength laser, the increase in the emission current, i.e., the photoexcited emission current, was observed in the saturated region of the F–N plots. The photoexcited emission current was proportional to the laser intensity.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.4 pp.371-376
- Publication Date
- 2015/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.371
- Type of Manuscript
- PAPER
- Category
- Electron Tubes, Vacuum and Beam Technology
Authors
Tomomi YOSHIMOTO
Toyo University
Tatsuo IWATA
Mie University
Keyword
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Tomomi YOSHIMOTO, Tatsuo IWATA, "Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 4, pp. 371-376, April 2015, doi: 10.1587/transele.E98.C.371.
Abstract: The field electron emission characteristics of a p-type Si emitter sharpened by a spirally scanned Ga focused-ion-beam milling process were investigated. Saturated Fowler–Nordheim (F–N) plots, which are unique phenomena of p-type semiconductor emitters, were observed. The slight increase of the emission current in the saturated F–N plots region was discussed in terms of the depletion layer width in which electron generation occurs. The temperature dependence of the field electron emission current was also discussed. The activation energy of carrier generation was determined to be 0.26 eV, ascribable to the surface states that accompany the defects introduced by the Ga ion beam. When the emitter was irradiated by a 650-nm-wavelength laser, the increase in the emission current, i.e., the photoexcited emission current, was observed in the saturated region of the F–N plots. The photoexcited emission current was proportional to the laser intensity.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.371/_p
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@ARTICLE{e98-c_4_371,
author={Tomomi YOSHIMOTO, Tatsuo IWATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter},
year={2015},
volume={E98-C},
number={4},
pages={371-376},
abstract={The field electron emission characteristics of a p-type Si emitter sharpened by a spirally scanned Ga focused-ion-beam milling process were investigated. Saturated Fowler–Nordheim (F–N) plots, which are unique phenomena of p-type semiconductor emitters, were observed. The slight increase of the emission current in the saturated F–N plots region was discussed in terms of the depletion layer width in which electron generation occurs. The temperature dependence of the field electron emission current was also discussed. The activation energy of carrier generation was determined to be 0.26 eV, ascribable to the surface states that accompany the defects introduced by the Ga ion beam. When the emitter was irradiated by a 650-nm-wavelength laser, the increase in the emission current, i.e., the photoexcited emission current, was observed in the saturated region of the F–N plots. The photoexcited emission current was proportional to the laser intensity.},
keywords={},
doi={10.1587/transele.E98.C.371},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter
T2 - IEICE TRANSACTIONS on Electronics
SP - 371
EP - 376
AU - Tomomi YOSHIMOTO
AU - Tatsuo IWATA
PY - 2015
DO - 10.1587/transele.E98.C.371
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2015
AB - The field electron emission characteristics of a p-type Si emitter sharpened by a spirally scanned Ga focused-ion-beam milling process were investigated. Saturated Fowler–Nordheim (F–N) plots, which are unique phenomena of p-type semiconductor emitters, were observed. The slight increase of the emission current in the saturated F–N plots region was discussed in terms of the depletion layer width in which electron generation occurs. The temperature dependence of the field electron emission current was also discussed. The activation energy of carrier generation was determined to be 0.26 eV, ascribable to the surface states that accompany the defects introduced by the Ga ion beam. When the emitter was irradiated by a 650-nm-wavelength laser, the increase in the emission current, i.e., the photoexcited emission current, was observed in the saturated region of the F–N plots. The photoexcited emission current was proportional to the laser intensity.
ER -
English
