Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.
Hiroshi YAMAUCHI
Chiba University
Shigekazu KUNIYOSHI
Chiba University
Masatoshi SAKAI
Chiba University
Kazuhiro KUDO
Chiba University
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Hiroshi YAMAUCHI, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO, "Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 2, pp. 80-85, February 2015, doi: 10.1587/transele.E98.C.80.
Abstract: Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.80/_p
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@ARTICLE{e98-c_2_80,
author={Hiroshi YAMAUCHI, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition},
year={2015},
volume={E98-C},
number={2},
pages={80-85},
abstract={Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.},
keywords={},
doi={10.1587/transele.E98.C.80},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 80
EP - 85
AU - Hiroshi YAMAUCHI
AU - Shigekazu KUNIYOSHI
AU - Masatoshi SAKAI
AU - Kazuhiro KUDO
PY - 2015
DO - 10.1587/transele.E98.C.80
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2015
AB - Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.
ER -