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IEICE TRANSACTIONS on Electronics

Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition

Hiroshi YAMAUCHI, Shigekazu KUNIYOSHI, Masatoshi SAKAI, Kazuhiro KUDO

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Summary :

Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.

Publication
IEICE TRANSACTIONS on Electronics Vol.E98-C No.2 pp.80-85
Publication Date
2015/02/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E98.C.80
Type of Manuscript
Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)
Category

Authors

Hiroshi YAMAUCHI
  Chiba University
Shigekazu KUNIYOSHI
  Chiba University
Masatoshi SAKAI
  Chiba University
Kazuhiro KUDO
  Chiba University

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