We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.

We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.

We deposited thin films of thiophene/phenylene co-oligomers (TPCOs) onto poly(tetrafluoroethylene) (PTFE) layers that were friction-transferred on substrates. These films were composed of aligned molecules in such a way that their polarizations of emissions and absorbances were larger along the drawing direction than those perpendicular to that direction. Organic field-effect transistors (OFETs) fabricated with these films indicated large mobilities, when the drawing direction of PTFE was parallel to the channel length direction. The friction-transfer technique forms the TPCO films that indicate the anisotropic optical and electronic properties.

Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.

We have fabricated printed active antenna for flexible information tag which have a loop antenna combined with step-edge vertical channel organic field-effect transistor (SVC-OFET). Fabrication using printing process, characterization of SVC-OFETs, and performances of active antenna elements are discussed in detail.

Solution-based organic field-effect transistors (OFETs) with low parasitic capacitance have been fabricated using a self-aligned method. The self-aligned processes using a cross-linking polymer gate insulator allow fabricating electrically stable polymer OFETs with small overlap area between the source-drain electrodes and the gate electrode, whose frequency characteristics have been investigated by impedance spectroscopy (IS). The IS of polymer OFETs with self-aligned electrodes reveals frequency-dependent channel formation process and the frequency response in FET structure.

The control of the organic field-effect transistor characteristics is necessary to produce the integrated circuits using organic semiconductors. Variations in the poly (3-hexylthiophene) field-effect transistor characteristics upon post-treatment such as thermal treatment and voltage treatment in N2 atmosphere have been investigated. The controllability and reproducibility of the threshold voltage and mobility were achieved as a result of the post-treatments.

Time-resolved microscopic optical second harmonic generation (TRM-SHG) imaging measurement revealed quantitatively the potential drop at the electrode contact of pentacene field effect transistors (FET). An activation of the SH signal at the edge of Ag-source electrode indicates the presence of large potential drop at pentacene-Ag contact during device operation, whereas negligible potential drop was observed at pentacene-Au contact. These findings agree with the injection characteristics of electrodes owing to the relationship between the work function of the metal and the HOMO level of pentacene.