IEICE TRANSACTIONS on Electronics
Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs
Summary :
A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.10 pp.981-983
- Publication Date
- 2015/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.981
- Type of Manuscript
- BRIEF PAPER
- Category
- Electronic Circuits
Authors
Qing HUA
University of Electronic Science and Technology of China
Zehong LI
University of Electronic Science and Technology of China
Bo ZHANG
University of Electronic Science and Technology of China
Keyword
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Qing HUA, Zehong LI, Bo ZHANG, "Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 10, pp. 981-983, October 2015, doi: 10.1587/transele.E98.C.981.
Abstract: A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.981/_p
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@ARTICLE{e98-c_10_981,
author={Qing HUA, Zehong LI, Bo ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs},
year={2015},
volume={E98-C},
number={10},
pages={981-983},
abstract={A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.},
keywords={},
doi={10.1587/transele.E98.C.981},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs
T2 - IEICE TRANSACTIONS on Electronics
SP - 981
EP - 983
AU - Qing HUA
AU - Zehong LI
AU - Bo ZHANG
PY - 2015
DO - 10.1587/transele.E98.C.981
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2015
AB - A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.
ER -
English
