Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
Summary :
In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.547-550
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.547
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Sungjun KIM
Seoul National University
Min-Hwi KIM
Seoul National University
Seongjae CHO
Gachon University
Byung-Gook PARK
Seoul National University
Keyword
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Sungjun KIM, Min-Hwi KIM, Seongjae CHO, Byung-Gook PARK, "Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 547-550, May 2016, doi: 10.1587/transele.E99.C.547.
Abstract: In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.547/_p
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@ARTICLE{e99-c_5_547,
author={Sungjun KIM, Min-Hwi KIM, Seongjae CHO, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell},
year={2016},
volume={E99-C},
number={5},
pages={547-550},
abstract={In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.},
keywords={},
doi={10.1587/transele.E99.C.547},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
T2 - IEICE TRANSACTIONS on Electronics
SP - 547
EP - 550
AU - Sungjun KIM
AU - Min-Hwi KIM
AU - Seongjae CHO
AU - Byung-Gook PARK
PY - 2016
DO - 10.1587/transele.E99.C.547
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.
ER -
English
