In this paper, we define a wireless sensor network with multiple types of sensors as a wireless heterogeneous sensor network (WHSN), and propose an efficient query dissemination scheme (EDT) in the WHSN. The EDT based on total dominant pruning can forward queries to only the nodes with data requested by the user, thereby reducing unnecessary packet transmission. We show that the EDT is suitable for the WHSN environment through a variety of simulations.

In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si$_{3}$N$_{4}$/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.

This letter presents an ultra low-jitter clock generator that employs an area-efficient LC-VCO. In order to fully utilize the area of the on-chip inductor, the loop filter of a phase locked loop (PLL) is located underneath the inductor. A prototype chip implemented in 0.13 µm CMOS process achieves 105 MHz to 225 MHz of clock frequency while consuming 4.2 mW from 1.2 V supply. The measured rms jitter and normalized rms jitter of the proposed clock generator are 2.8 ps and 0.031% at 105 MHz, respectively.

In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.

A network of sensors can be used to obtain state based data from the area in which they are deployed. To reduce costs, the data sent via intermediate sensors to a sink are often aggregated. In this letter, we introduce Self-Construction of Aggregation Tree (SCAT) scheme which uses a novel data aggregation scheme utilizing the knowledge of the mobile node and the infrastructure (static node tree) in gathering the data from the mobile node. The static nodes can construct a near- optimal aggregation tree by themselves, using the knowledge of the mobile node, which is a process similar to forming the centralized aggregation tree.