IEICE TRANSACTIONS on Electronics
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
Summary :
In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.5 pp.429-433
- Publication Date
- 2015/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.429
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Sungjun KIM
Seoul National University
Sunghun JUNG
Seoul National University
Min-Hwi KIM
Seoul National University
Seongjae CHO
Gachon University
Byung-Gook PARK
Seoul National University
Keyword
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Sungjun KIM, Sunghun JUNG, Min-Hwi KIM, Seongjae CHO, Byung-Gook PARK, "Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 5, pp. 429-433, May 2015, doi: 10.1587/transele.E98.C.429.
Abstract: In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.429/_p
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@ARTICLE{e98-c_5_429,
author={Sungjun KIM, Sunghun JUNG, Min-Hwi KIM, Seongjae CHO, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals},
year={2015},
volume={E98-C},
number={5},
pages={429-433},
abstract={In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.},
keywords={},
doi={10.1587/transele.E98.C.429},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
T2 - IEICE TRANSACTIONS on Electronics
SP - 429
EP - 433
AU - Sungjun KIM
AU - Sunghun JUNG
AU - Min-Hwi KIM
AU - Seongjae CHO
AU - Byung-Gook PARK
PY - 2015
DO - 10.1587/transele.E98.C.429
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2015
AB - In this work, resistive switching random-access memory (RRAM) devices having a structure of metal/Si3N4/Si with different top electrode metals were fabricated to investigate the changes in switching and conduction mechanisms depending on electrode metals. It is shown that the metal workfunction is not strongly related with either high-resistance state (HRS) and forming voltage. Top electrodes (TEs) of Al, Cu, and Ni show both bipolar and unipolar switching characteristics. The changes of resistances in these devices can be explained by the different defect arrangements in the switching layer (SL). Among the devices with different TE metals, one with Ag electrode does not show unipolar switching unlike the others. The conducting filaments of Ag-electrode device in the low-resistance state (LRS) demonstrated metallic behaviors in the temperature-controlled experiments, which supports that Ag substantially participates in the conduction as a filament source. Moreover, the difference in switching speed is identified depending on TE metals.
ER -
English
