IEICE TRANSACTIONS on Fundamentals
10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells
Summary :
A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 µm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E90-A No.2 pp.326-332
- Publication Date
- 2007/02/01
- Publicized
- Online ISSN
- 1745-1337
- DOI
- 10.1093/ietfec/e90-a.2.326
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
- Category
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Tzung-Han WU, Chinchun MENG, "10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells" in IEICE TRANSACTIONS on Fundamentals,
vol. E90-A, no. 2, pp. 326-332, February 2007, doi: 10.1093/ietfec/e90-a.2.326.
Abstract: A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 µm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1093/ietfec/e90-a.2.326/_p
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@ARTICLE{e90-a_2_326,
author={Tzung-Han WU, Chinchun MENG, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells},
year={2007},
volume={E90-A},
number={2},
pages={326-332},
abstract={A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 µm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.},
keywords={},
doi={10.1093/ietfec/e90-a.2.326},
ISSN={1745-1337},
month={February},}
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TY - JOUR
TI - 10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 326
EP - 332
AU - Tzung-Han WU
AU - Chinchun MENG
PY - 2007
DO - 10.1093/ietfec/e90-a.2.326
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E90-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2007
AB - A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 µm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1 dB of -20 dBm, and IIP3 of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
ER -
English
