A Design of Novel nVT Level Shift Circuits Using MOSFETs
Summary :
Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E77-A No.2 pp.394-397
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Section on High-Performance MOS Analog Circuits)
- Category
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Akira HYOGO, Keitaro SEKINE, "A Design of Novel nVT Level Shift Circuits Using MOSFETs" in IEICE TRANSACTIONS on Fundamentals,
vol. E77-A, no. 2, pp. 394-397, February 1994, doi: .
Abstract: Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e77-a_2_394/_p
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@ARTICLE{e77-a_2_394,
author={Akira HYOGO, Keitaro SEKINE, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Design of Novel nVT Level Shift Circuits Using MOSFETs},
year={1994},
volume={E77-A},
number={2},
pages={394-397},
abstract={Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - A Design of Novel nVT Level Shift Circuits Using MOSFETs
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 394
EP - 397
AU - Akira HYOGO
AU - Keitaro SEKINE
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E77-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 1994
AB - Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.
ER -
English
