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Michio SUGI, Kazuhiro SAITO, "Non-integer Exponents in Electronic Circuits II: Memory Effects in the Fractal Immittance" in IEICE TRANSACTIONS on Fundamentals,
vol. E77-A, no. 4, pp. 688-697, April 1994, doi: .
Abstract: The transient behavior in the fractal admittance acting as a non-integer-rank differential/integral operator, Y(s) ∝ sa with -1a1 and a0, is examined from the point of view of memory effects by employing the distributed-relaxation-time model. The internal state of the diode is found to be represented by the current spectrum i(λ, t) with respect to the carrier relaxation rate λ, leading to a general formulation of the long-time-tail memory behavior characteristic of the operator. One-to-one corrsepondence is found among the input voltage in the past ν(-t), the short-circuit current isc(t) and the initial current spectrum i(λ, 0) within the framework of the Laplace-type integral transformation and its inverse, assuring that each response retains in principle the entire information on the corresponding input, such as the functional form, the magnitude, the onset time, and so forth. The current and voltage responses are exemplified for various single-pulse voltage inputs. The responses to the pulse-train inputs corresponding to different ASCII codes are found to be properly discriminated between one another, showing the potentials of the present memory effects.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e77-a_4_688/_p
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@ARTICLE{e77-a_4_688,
author={Michio SUGI, Kazuhiro SAITO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Non-integer Exponents in Electronic Circuits II: Memory Effects in the Fractal Immittance},
year={1994},
volume={E77-A},
number={4},
pages={688-697},
abstract={The transient behavior in the fractal admittance acting as a non-integer-rank differential/integral operator, Y(s) ∝ sa with -1a1 and a0, is examined from the point of view of memory effects by employing the distributed-relaxation-time model. The internal state of the diode is found to be represented by the current spectrum i(λ, t) with respect to the carrier relaxation rate λ, leading to a general formulation of the long-time-tail memory behavior characteristic of the operator. One-to-one corrsepondence is found among the input voltage in the past ν(-t), the short-circuit current isc(t) and the initial current spectrum i(λ, 0) within the framework of the Laplace-type integral transformation and its inverse, assuring that each response retains in principle the entire information on the corresponding input, such as the functional form, the magnitude, the onset time, and so forth. The current and voltage responses are exemplified for various single-pulse voltage inputs. The responses to the pulse-train inputs corresponding to different ASCII codes are found to be properly discriminated between one another, showing the potentials of the present memory effects.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Non-integer Exponents in Electronic Circuits II: Memory Effects in the Fractal Immittance
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 688
EP - 697
AU - Michio SUGI
AU - Kazuhiro SAITO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E77-A
IS - 4
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - April 1994
AB - The transient behavior in the fractal admittance acting as a non-integer-rank differential/integral operator, Y(s) ∝ sa with -1a1 and a0, is examined from the point of view of memory effects by employing the distributed-relaxation-time model. The internal state of the diode is found to be represented by the current spectrum i(λ, t) with respect to the carrier relaxation rate λ, leading to a general formulation of the long-time-tail memory behavior characteristic of the operator. One-to-one corrsepondence is found among the input voltage in the past ν(-t), the short-circuit current isc(t) and the initial current spectrum i(λ, 0) within the framework of the Laplace-type integral transformation and its inverse, assuring that each response retains in principle the entire information on the corresponding input, such as the functional form, the magnitude, the onset time, and so forth. The current and voltage responses are exemplified for various single-pulse voltage inputs. The responses to the pulse-train inputs corresponding to different ASCII codes are found to be properly discriminated between one another, showing the potentials of the present memory effects.
ER -
English
