IEICE TRANSACTIONS on Fundamentals
A New Description of MOS Circuits at Switch-Level with Applications
Summary :
After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.
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- IEICE TRANSACTIONS on Fundamentals Vol.E80-A No.10 pp.1892-1901
- Publication Date
- 1997/10/25
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- Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
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Massoud PEDRAM, Xunwei WU, "A New Description of MOS Circuits at Switch-Level with Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E80-A, no. 10, pp. 1892-1901, October 1997, doi: .
Abstract: After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e80-a_10_1892/_p
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@ARTICLE{e80-a_10_1892,
author={Massoud PEDRAM, Xunwei WU, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A New Description of MOS Circuits at Switch-Level with Applications},
year={1997},
volume={E80-A},
number={10},
pages={1892-1901},
abstract={After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A New Description of MOS Circuits at Switch-Level with Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1892
EP - 1901
AU - Massoud PEDRAM
AU - Xunwei WU
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E80-A
IS - 10
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - October 1997
AB - After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.
ER -
English
