IEICE TRANSACTIONS on Fundamentals
A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications
Summary :
This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E83-A No.2 pp.228-235
- Publication Date
- 2000/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, "A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 2, pp. 228-235, February 2000, doi: .
Abstract: This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_2_228/_p
Copy
@ARTICLE{e83-a_2_228,
author={Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications},
year={2000},
volume={E83-A},
number={2},
pages={228-235},
abstract={This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 228
EP - 235
AU - Kohei FUJII
AU - Yasuhiko HARA
AU - Fadhel M. GHANNOUCHI
AU - Toshiyuki YAKABE
AU - Hatsuo YABE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2000
AB - This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
ER -
English
