Steady-State Response of Nonlinear Circuits Containing Parasitic Elements
Summary :
We propose here a time-domain shooting algorithm for calculating the steady-state responses of nonlinear RF circuits containing parasitic elements that is based on both a modified Newton and a secant methods. Bipolar transistors and MOSFETs in ICs have small parasitic capacitors among their terminals. We can not neglect them because they will gives large effects to the shooting algorithm at the high frequency. Since our purpose is to develop a user friendly simulator, we mainly take into account the relatively large normal capacitors such as coupling and/or by-pass capacitors and so on, because the parasitic capacitors are usually smaller and contained in the device models. We have developed a very simple simulator only using the fundamental tools of SPICE, which can be applied to relatively large scale ICs, efficiently.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E83-A No.6 pp.1023-1031
- Publication Date
- 2000/06/25
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- Online ISSN
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- Special Section PAPER (Special Section of Papers Selected from 1999 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC'99))
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Takeshi MATSUDA, Yoshifumi NISHIO, Yoshihiro YAMAGAMI, Akio USHIDA, "Steady-State Response of Nonlinear Circuits Containing Parasitic Elements" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 6, pp. 1023-1031, June 2000, doi: .
Abstract: We propose here a time-domain shooting algorithm for calculating the steady-state responses of nonlinear RF circuits containing parasitic elements that is based on both a modified Newton and a secant methods. Bipolar transistors and MOSFETs in ICs have small parasitic capacitors among their terminals. We can not neglect them because they will gives large effects to the shooting algorithm at the high frequency. Since our purpose is to develop a user friendly simulator, we mainly take into account the relatively large normal capacitors such as coupling and/or by-pass capacitors and so on, because the parasitic capacitors are usually smaller and contained in the device models. We have developed a very simple simulator only using the fundamental tools of SPICE, which can be applied to relatively large scale ICs, efficiently.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_6_1023/_p
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@ARTICLE{e83-a_6_1023,
author={Takeshi MATSUDA, Yoshifumi NISHIO, Yoshihiro YAMAGAMI, Akio USHIDA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Steady-State Response of Nonlinear Circuits Containing Parasitic Elements},
year={2000},
volume={E83-A},
number={6},
pages={1023-1031},
abstract={We propose here a time-domain shooting algorithm for calculating the steady-state responses of nonlinear RF circuits containing parasitic elements that is based on both a modified Newton and a secant methods. Bipolar transistors and MOSFETs in ICs have small parasitic capacitors among their terminals. We can not neglect them because they will gives large effects to the shooting algorithm at the high frequency. Since our purpose is to develop a user friendly simulator, we mainly take into account the relatively large normal capacitors such as coupling and/or by-pass capacitors and so on, because the parasitic capacitors are usually smaller and contained in the device models. We have developed a very simple simulator only using the fundamental tools of SPICE, which can be applied to relatively large scale ICs, efficiently.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Steady-State Response of Nonlinear Circuits Containing Parasitic Elements
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1023
EP - 1031
AU - Takeshi MATSUDA
AU - Yoshifumi NISHIO
AU - Yoshihiro YAMAGAMI
AU - Akio USHIDA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 6
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - June 2000
AB - We propose here a time-domain shooting algorithm for calculating the steady-state responses of nonlinear RF circuits containing parasitic elements that is based on both a modified Newton and a secant methods. Bipolar transistors and MOSFETs in ICs have small parasitic capacitors among their terminals. We can not neglect them because they will gives large effects to the shooting algorithm at the high frequency. Since our purpose is to develop a user friendly simulator, we mainly take into account the relatively large normal capacitors such as coupling and/or by-pass capacitors and so on, because the parasitic capacitors are usually smaller and contained in the device models. We have developed a very simple simulator only using the fundamental tools of SPICE, which can be applied to relatively large scale ICs, efficiently.
ER -
English
