We present a new and efficient approach for extracting on-chip mutual inductances of VLSI interconnects by applying approximation formulae. The equations are based on the assumption of filaments or bars of finite width and zero thickness and are derived through Taylor's expansion of the exact formula for mutual inductance between filaments. Despite the assumption of uniform current density in each of the bars, the model is sufficiently accurate for the interconnections of current and future LSIs because the skin and proximity effects do not affect most wires. Expression of the equations in polynomial form provides a balance between accuracy and computational complexity. These equations are mapped according to the geometric structures for which they are most suitable in minimizing the runtime of inductance calculation while retaining the required accuracy. Within geometrical constraints, the wires are of arbitrary specification. Results of a comprehensive evaluation based on the ITRS-specified global wiring structure for 2003 shows that the inductance values were extracted by using the proposed approach, and they were within several percent of the values obtained by using commercial three-dimensional (3-D) field solvers. The efficiency of the proposed approach is also demonstrated by extraction from a real layout design that has 300-k interconnecting segments.
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Atsushi KUROKAWA, Takashi SATO, Hiroo MASUDA, "Approximation Formula Approach for the Efficient Extraction of On-Chip Mutual Inductances" in IEICE TRANSACTIONS on Fundamentals,
vol. E86-A, no. 12, pp. 2933-2941, December 2003, doi: .
Abstract: We present a new and efficient approach for extracting on-chip mutual inductances of VLSI interconnects by applying approximation formulae. The equations are based on the assumption of filaments or bars of finite width and zero thickness and are derived through Taylor's expansion of the exact formula for mutual inductance between filaments. Despite the assumption of uniform current density in each of the bars, the model is sufficiently accurate for the interconnections of current and future LSIs because the skin and proximity effects do not affect most wires. Expression of the equations in polynomial form provides a balance between accuracy and computational complexity. These equations are mapped according to the geometric structures for which they are most suitable in minimizing the runtime of inductance calculation while retaining the required accuracy. Within geometrical constraints, the wires are of arbitrary specification. Results of a comprehensive evaluation based on the ITRS-specified global wiring structure for 2003 shows that the inductance values were extracted by using the proposed approach, and they were within several percent of the values obtained by using commercial three-dimensional (3-D) field solvers. The efficiency of the proposed approach is also demonstrated by extraction from a real layout design that has 300-k interconnecting segments.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e86-a_12_2933/_p
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@ARTICLE{e86-a_12_2933,
author={Atsushi KUROKAWA, Takashi SATO, Hiroo MASUDA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Approximation Formula Approach for the Efficient Extraction of On-Chip Mutual Inductances},
year={2003},
volume={E86-A},
number={12},
pages={2933-2941},
abstract={We present a new and efficient approach for extracting on-chip mutual inductances of VLSI interconnects by applying approximation formulae. The equations are based on the assumption of filaments or bars of finite width and zero thickness and are derived through Taylor's expansion of the exact formula for mutual inductance between filaments. Despite the assumption of uniform current density in each of the bars, the model is sufficiently accurate for the interconnections of current and future LSIs because the skin and proximity effects do not affect most wires. Expression of the equations in polynomial form provides a balance between accuracy and computational complexity. These equations are mapped according to the geometric structures for which they are most suitable in minimizing the runtime of inductance calculation while retaining the required accuracy. Within geometrical constraints, the wires are of arbitrary specification. Results of a comprehensive evaluation based on the ITRS-specified global wiring structure for 2003 shows that the inductance values were extracted by using the proposed approach, and they were within several percent of the values obtained by using commercial three-dimensional (3-D) field solvers. The efficiency of the proposed approach is also demonstrated by extraction from a real layout design that has 300-k interconnecting segments.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - Approximation Formula Approach for the Efficient Extraction of On-Chip Mutual Inductances
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2933
EP - 2941
AU - Atsushi KUROKAWA
AU - Takashi SATO
AU - Hiroo MASUDA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E86-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2003
AB - We present a new and efficient approach for extracting on-chip mutual inductances of VLSI interconnects by applying approximation formulae. The equations are based on the assumption of filaments or bars of finite width and zero thickness and are derived through Taylor's expansion of the exact formula for mutual inductance between filaments. Despite the assumption of uniform current density in each of the bars, the model is sufficiently accurate for the interconnections of current and future LSIs because the skin and proximity effects do not affect most wires. Expression of the equations in polynomial form provides a balance between accuracy and computational complexity. These equations are mapped according to the geometric structures for which they are most suitable in minimizing the runtime of inductance calculation while retaining the required accuracy. Within geometrical constraints, the wires are of arbitrary specification. Results of a comprehensive evaluation based on the ITRS-specified global wiring structure for 2003 shows that the inductance values were extracted by using the proposed approach, and they were within several percent of the values obtained by using commercial three-dimensional (3-D) field solvers. The efficiency of the proposed approach is also demonstrated by extraction from a real layout design that has 300-k interconnecting segments.
ER -