IEICE TRANSACTIONS on Fundamentals
Correlations between BTI-Induced Degradations and Process Variations on ASICs and FPGAs
Summary :
We analyze the correlation between BTI (Bias Temperature Instability) -induced degradations and process variations. Those reliability issues are correlated. BTI is one of the most significant aging-degradations on LSIs. Threshold voltages of MOSFETs increase with time when biases stress their gates. It shows a strong effect of BTI on highly scaled LSIs in the same way as the process variations. The accurate prediction of the combinational effects is indispensable. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure frequencies of ROs (Ring Oscillators) of 65-nm process test circuits on two types of LSIs, ASICs and FPGAs. There are 98 and 837 ROs on our ASICs and FPGAs respectively. The frequencies of ROs follow gaussian distributions. We describe the highest frequency group as the “fast” conditon, the average group as the “typical” conditon and the lowest group as the “slow” conditon. We measure the aging-degradations of the ROs of the three conditions on the accelerated test. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can define a smaller design margin for BTI-induced degradations than that without considering the correlation because the degradation at the “slow” conditon is smaller than the average and the fast.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E97-A No.12 pp.2367-2372
- Publication Date
- 2014/12/01
- Publicized
- Online ISSN
- 1745-1337
- DOI
- 10.1587/transfun.E97.A.2367
- Type of Manuscript
- Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
- Category
- Device and Circuit Modeling and Analysis
Authors
Michitarou YABUUCHI
Kyoto Institute of Technology
Ryo KISHIDA
Kyoto Institute of Technology
Kazutoshi KOBAYASHI
Kyoto Institute of Technology
Keyword
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Michitarou YABUUCHI, Ryo KISHIDA, Kazutoshi KOBAYASHI, "Correlations between BTI-Induced Degradations and Process Variations on ASICs and FPGAs" in IEICE TRANSACTIONS on Fundamentals,
vol. E97-A, no. 12, pp. 2367-2372, December 2014, doi: 10.1587/transfun.E97.A.2367.
Abstract: We analyze the correlation between BTI (Bias Temperature Instability) -induced degradations and process variations. Those reliability issues are correlated. BTI is one of the most significant aging-degradations on LSIs. Threshold voltages of MOSFETs increase with time when biases stress their gates. It shows a strong effect of BTI on highly scaled LSIs in the same way as the process variations. The accurate prediction of the combinational effects is indispensable. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure frequencies of ROs (Ring Oscillators) of 65-nm process test circuits on two types of LSIs, ASICs and FPGAs. There are 98 and 837 ROs on our ASICs and FPGAs respectively. The frequencies of ROs follow gaussian distributions. We describe the highest frequency group as the “fast” conditon, the average group as the “typical” conditon and the lowest group as the “slow” conditon. We measure the aging-degradations of the ROs of the three conditions on the accelerated test. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can define a smaller design margin for BTI-induced degradations than that without considering the correlation because the degradation at the “slow” conditon is smaller than the average and the fast.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E97.A.2367/_p
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@ARTICLE{e97-a_12_2367,
author={Michitarou YABUUCHI, Ryo KISHIDA, Kazutoshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Correlations between BTI-Induced Degradations and Process Variations on ASICs and FPGAs},
year={2014},
volume={E97-A},
number={12},
pages={2367-2372},
abstract={We analyze the correlation between BTI (Bias Temperature Instability) -induced degradations and process variations. Those reliability issues are correlated. BTI is one of the most significant aging-degradations on LSIs. Threshold voltages of MOSFETs increase with time when biases stress their gates. It shows a strong effect of BTI on highly scaled LSIs in the same way as the process variations. The accurate prediction of the combinational effects is indispensable. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure frequencies of ROs (Ring Oscillators) of 65-nm process test circuits on two types of LSIs, ASICs and FPGAs. There are 98 and 837 ROs on our ASICs and FPGAs respectively. The frequencies of ROs follow gaussian distributions. We describe the highest frequency group as the “fast” conditon, the average group as the “typical” conditon and the lowest group as the “slow” conditon. We measure the aging-degradations of the ROs of the three conditions on the accelerated test. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can define a smaller design margin for BTI-induced degradations than that without considering the correlation because the degradation at the “slow” conditon is smaller than the average and the fast.},
keywords={},
doi={10.1587/transfun.E97.A.2367},
ISSN={1745-1337},
month={December},}
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TY - JOUR
TI - Correlations between BTI-Induced Degradations and Process Variations on ASICs and FPGAs
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2367
EP - 2372
AU - Michitarou YABUUCHI
AU - Ryo KISHIDA
AU - Kazutoshi KOBAYASHI
PY - 2014
DO - 10.1587/transfun.E97.A.2367
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E97-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2014
AB - We analyze the correlation between BTI (Bias Temperature Instability) -induced degradations and process variations. Those reliability issues are correlated. BTI is one of the most significant aging-degradations on LSIs. Threshold voltages of MOSFETs increase with time when biases stress their gates. It shows a strong effect of BTI on highly scaled LSIs in the same way as the process variations. The accurate prediction of the combinational effects is indispensable. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure frequencies of ROs (Ring Oscillators) of 65-nm process test circuits on two types of LSIs, ASICs and FPGAs. There are 98 and 837 ROs on our ASICs and FPGAs respectively. The frequencies of ROs follow gaussian distributions. We describe the highest frequency group as the “fast” conditon, the average group as the “typical” conditon and the lowest group as the “slow” conditon. We measure the aging-degradations of the ROs of the three conditions on the accelerated test. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can define a smaller design margin for BTI-induced degradations than that without considering the correlation because the degradation at the “slow” conditon is smaller than the average and the fast.
ER -
English
