Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.
Yasushi IGARASHI
National Institute of Advanced Industrial Science and Technology (AIST)
Tadashi CHIBA
National Institute of Advanced Industrial Science and Technology (AIST)
Shin-ichi O'UCHI
National Institute of Advanced Industrial Science and Technology (AIST)
Meishoku MASAHARA
National Institute of Advanced Industrial Science and Technology (AIST)
Kunihiro SAKAMOTO
National Institute of Advanced Industrial Science and Technology (AIST)
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Yasushi IGARASHI, Tadashi CHIBA, Shin-ichi O'UCHI, Meishoku MASAHARA, Kunihiro SAKAMOTO, "SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System" in IEICE TRANSACTIONS on Fundamentals,
vol. E97-A, no. 3, pp. 741-748, March 2014, doi: 10.1587/transfun.E97.A.741.
Abstract: Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E97.A.741/_p
Copy
@ARTICLE{e97-a_3_741,
author={Yasushi IGARASHI, Tadashi CHIBA, Shin-ichi O'UCHI, Meishoku MASAHARA, Kunihiro SAKAMOTO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System},
year={2014},
volume={E97-A},
number={3},
pages={741-748},
abstract={Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.},
keywords={},
doi={10.1587/transfun.E97.A.741},
ISSN={1745-1337},
month={March},}
Copy
TY - JOUR
TI - SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 741
EP - 748
AU - Yasushi IGARASHI
AU - Tadashi CHIBA
AU - Shin-ichi O'UCHI
AU - Meishoku MASAHARA
AU - Kunihiro SAKAMOTO
PY - 2014
DO - 10.1587/transfun.E97.A.741
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E97-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2014
AB - Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.
ER -