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IEICE TRANSACTIONS on Fundamentals

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System

Yasushi IGARASHI, Tadashi CHIBA, Shin-ichi O'UCHI, Meishoku MASAHARA, Kunihiro SAKAMOTO

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Summary :

Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.

Publication
IEICE TRANSACTIONS on Fundamentals Vol.E97-A No.3 pp.741-748
Publication Date
2014/03/01
Publicized
Online ISSN
1745-1337
DOI
10.1587/transfun.E97.A.741
Type of Manuscript
Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category

Authors

Yasushi IGARASHI
  National Institute of Advanced Industrial Science and Technology (AIST)
Tadashi CHIBA
  National Institute of Advanced Industrial Science and Technology (AIST)
Shin-ichi O'UCHI
  National Institute of Advanced Industrial Science and Technology (AIST)
Meishoku MASAHARA
  National Institute of Advanced Industrial Science and Technology (AIST)
Kunihiro SAKAMOTO
  National Institute of Advanced Industrial Science and Technology (AIST)

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