IEICE TRANSACTIONS on Information
On-Chip Detection of Process Shift and Process Spread for Post-Silicon Diagnosis and Model-Hardware Correlation
Summary :
This paper proposes the use of on-chip monitor circuits to detect process shift and process spread for post-silicon diagnosis and model-hardware correlation. The amounts of shift and spread allow test engineers to decide the correct test strategy. Monitor structures suitable for detection of process shift and process spread are discussed. Test chips targeting a nominal process corner as well as 4 other corners of “slow-slow”, “fast-fast”, “slow-fast” and “fast-slow” are fabricated in a 65nm process. The monitor structures correctly detects the location of each chip in the process space. The outputs of the monitor structures are further analyzed and decomposed into the process variations in threshold voltage and gate length for model-hardware correlation. Path delay predictions match closely with the silicon values using the extracted parameter shifts. On-chip monitors capable of detecting process shift and process spread are helpful for performance prediction of digital and analog circuits, adaptive delay testing and post-silicon statistical analysis.
- Publication
- IEICE TRANSACTIONS on Information Vol.E96-D No.9 pp.1971-1979
- Publication Date
- 2013/09/01
- Publicized
- Online ISSN
- 1745-1361
- DOI
- 10.1587/transinf.E96.D.1971
- Type of Manuscript
- Special Section PAPER (Special Section on Dependable Computing)
- Category
Authors
A.K.M. Mahfuzul ISLAM
Kyoto University
Hidetoshi ONODERA
Kyoto University,JST, CREST
Keyword
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A.K.M. Mahfuzul ISLAM, Hidetoshi ONODERA, "On-Chip Detection of Process Shift and Process Spread for Post-Silicon Diagnosis and Model-Hardware Correlation" in IEICE TRANSACTIONS on Information,
vol. E96-D, no. 9, pp. 1971-1979, September 2013, doi: 10.1587/transinf.E96.D.1971.
Abstract: This paper proposes the use of on-chip monitor circuits to detect process shift and process spread for post-silicon diagnosis and model-hardware correlation. The amounts of shift and spread allow test engineers to decide the correct test strategy. Monitor structures suitable for detection of process shift and process spread are discussed. Test chips targeting a nominal process corner as well as 4 other corners of “slow-slow”, “fast-fast”, “slow-fast” and “fast-slow” are fabricated in a 65nm process. The monitor structures correctly detects the location of each chip in the process space. The outputs of the monitor structures are further analyzed and decomposed into the process variations in threshold voltage and gate length for model-hardware correlation. Path delay predictions match closely with the silicon values using the extracted parameter shifts. On-chip monitors capable of detecting process shift and process spread are helpful for performance prediction of digital and analog circuits, adaptive delay testing and post-silicon statistical analysis.
URL: https://global.ieice.org/en_transactions/information/10.1587/transinf.E96.D.1971/_p
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@ARTICLE{e96-d_9_1971,
author={A.K.M. Mahfuzul ISLAM, Hidetoshi ONODERA, },
journal={IEICE TRANSACTIONS on Information},
title={On-Chip Detection of Process Shift and Process Spread for Post-Silicon Diagnosis and Model-Hardware Correlation},
year={2013},
volume={E96-D},
number={9},
pages={1971-1979},
abstract={This paper proposes the use of on-chip monitor circuits to detect process shift and process spread for post-silicon diagnosis and model-hardware correlation. The amounts of shift and spread allow test engineers to decide the correct test strategy. Monitor structures suitable for detection of process shift and process spread are discussed. Test chips targeting a nominal process corner as well as 4 other corners of “slow-slow”, “fast-fast”, “slow-fast” and “fast-slow” are fabricated in a 65nm process. The monitor structures correctly detects the location of each chip in the process space. The outputs of the monitor structures are further analyzed and decomposed into the process variations in threshold voltage and gate length for model-hardware correlation. Path delay predictions match closely with the silicon values using the extracted parameter shifts. On-chip monitors capable of detecting process shift and process spread are helpful for performance prediction of digital and analog circuits, adaptive delay testing and post-silicon statistical analysis.},
keywords={},
doi={10.1587/transinf.E96.D.1971},
ISSN={1745-1361},
month={September},}
Copy
TY - JOUR
TI - On-Chip Detection of Process Shift and Process Spread for Post-Silicon Diagnosis and Model-Hardware Correlation
T2 - IEICE TRANSACTIONS on Information
SP - 1971
EP - 1979
AU - A.K.M. Mahfuzul ISLAM
AU - Hidetoshi ONODERA
PY - 2013
DO - 10.1587/transinf.E96.D.1971
JO - IEICE TRANSACTIONS on Information
SN - 1745-1361
VL - E96-D
IS - 9
JA - IEICE TRANSACTIONS on Information
Y1 - September 2013
AB - This paper proposes the use of on-chip monitor circuits to detect process shift and process spread for post-silicon diagnosis and model-hardware correlation. The amounts of shift and spread allow test engineers to decide the correct test strategy. Monitor structures suitable for detection of process shift and process spread are discussed. Test chips targeting a nominal process corner as well as 4 other corners of “slow-slow”, “fast-fast”, “slow-fast” and “fast-slow” are fabricated in a 65nm process. The monitor structures correctly detects the location of each chip in the process space. The outputs of the monitor structures are further analyzed and decomposed into the process variations in threshold voltage and gate length for model-hardware correlation. Path delay predictions match closely with the silicon values using the extracted parameter shifts. On-chip monitors capable of detecting process shift and process spread are helpful for performance prediction of digital and analog circuits, adaptive delay testing and post-silicon statistical analysis.
ER -
English
