To know the correlation between the surface contamination of semiconductors and electrical properties of semiconductor devices fabricated on the surface, the contamination of chemically etched Si surface was measured by Auger electron spectroscopy (AES) and Schottky contact was formed by evaporation of Au on that surface in situ. The various chemical etchants were used, including HF, HNO3, CH3COOH, their mixture, and alkaline etchant. The saturation current, the barrier height, and the n-value of the forward current-voltage characteristics of Au-Si Schottky contact were used for evaluating device characteristics, and in-depth profile of composition of the metal film on Si was also measuring by AES combined with ion-sputter etching. Following results are obtained; The barrier height of the Au-Si Schottky contact whose Si surface is contaminated by carbon is low and 0.81
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Tetsuji ODA, Takuo SUGANO, "Electrical Properties of Au-Si Schottky Contacts in Relation to Auger Electron Spectroscopic Analysis" in IEICE TRANSACTIONS on transactions,
vol. E59-E, no. 10, pp. 7-13, October 1976, doi: .
Abstract: To know the correlation between the surface contamination of semiconductors and electrical properties of semiconductor devices fabricated on the surface, the contamination of chemically etched Si surface was measured by Auger electron spectroscopy (AES) and Schottky contact was formed by evaporation of Au on that surface in situ. The various chemical etchants were used, including HF, HNO3, CH3COOH, their mixture, and alkaline etchant. The saturation current, the barrier height, and the n-value of the forward current-voltage characteristics of Au-Si Schottky contact were used for evaluating device characteristics, and in-depth profile of composition of the metal film on Si was also measuring by AES combined with ion-sputter etching. Following results are obtained; The barrier height of the Au-Si Schottky contact whose Si surface is contaminated by carbon is low and 0.81
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e59-e_10_7/_p
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@ARTICLE{e59-e_10_7,
author={Tetsuji ODA, Takuo SUGANO, },
journal={IEICE TRANSACTIONS on transactions},
title={Electrical Properties of Au-Si Schottky Contacts in Relation to Auger Electron Spectroscopic Analysis},
year={1976},
volume={E59-E},
number={10},
pages={7-13},
abstract={To know the correlation between the surface contamination of semiconductors and electrical properties of semiconductor devices fabricated on the surface, the contamination of chemically etched Si surface was measured by Auger electron spectroscopy (AES) and Schottky contact was formed by evaporation of Au on that surface in situ. The various chemical etchants were used, including HF, HNO3, CH3COOH, their mixture, and alkaline etchant. The saturation current, the barrier height, and the n-value of the forward current-voltage characteristics of Au-Si Schottky contact were used for evaluating device characteristics, and in-depth profile of composition of the metal film on Si was also measuring by AES combined with ion-sputter etching. Following results are obtained; The barrier height of the Au-Si Schottky contact whose Si surface is contaminated by carbon is low and 0.81
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Electrical Properties of Au-Si Schottky Contacts in Relation to Auger Electron Spectroscopic Analysis
T2 - IEICE TRANSACTIONS on transactions
SP - 7
EP - 13
AU - Tetsuji ODA
AU - Takuo SUGANO
PY - 1976
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E59-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1976
AB - To know the correlation between the surface contamination of semiconductors and electrical properties of semiconductor devices fabricated on the surface, the contamination of chemically etched Si surface was measured by Auger electron spectroscopy (AES) and Schottky contact was formed by evaporation of Au on that surface in situ. The various chemical etchants were used, including HF, HNO3, CH3COOH, their mixture, and alkaline etchant. The saturation current, the barrier height, and the n-value of the forward current-voltage characteristics of Au-Si Schottky contact were used for evaluating device characteristics, and in-depth profile of composition of the metal film on Si was also measuring by AES combined with ion-sputter etching. Following results are obtained; The barrier height of the Au-Si Schottky contact whose Si surface is contaminated by carbon is low and 0.81
ER -