Fabrication and Noise Characteristics of Avalanche Photodiodes

Hideo MATSUMOTO; Takao KANEDA; Toyoshi YAMAOKA

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Hideo MATSUMOTO, Takao KANEDA, Toyoshi YAMAOKA, "Fabrication and Noise Characteristics of Avalanche Photodiodes" in IEICE TRANSACTIONS on transactions, vol. E59-E, no. 11, pp. 14-15, November 1976, doi: .
Abstract: Silicon avalanche photodiode with the Nπ₁Pπ₂P structure is fabricated, using the technology of epitaxitial growth after boron ion-implantation to bury a P layer. The diode with the excess noise factor of F5 is obtained at the multiplication factor of M100 for λµm.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e59-e_11_14/_p

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@ARTICLE{e59-e_11_14,
author={Hideo MATSUMOTO, Takao KANEDA, Toyoshi YAMAOKA, },
journal={IEICE TRANSACTIONS on transactions},
title={Fabrication and Noise Characteristics of Avalanche Photodiodes},
year={1976},
volume={E59-E},
number={11},
pages={14-15},
abstract={Silicon avalanche photodiode with the Nπ₁Pπ₂P structure is fabricated, using the technology of epitaxitial growth after boron ion-implantation to bury a P layer. The diode with the excess noise factor of F5 is obtained at the multiplication factor of M100 for λµm.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Fabrication and Noise Characteristics of Avalanche Photodiodes
T2 - IEICE TRANSACTIONS on transactions
SP - 14
EP - 15
AU - Hideo MATSUMOTO
AU - Takao KANEDA
AU - Toyoshi YAMAOKA
PY - 1976
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E59-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1976
AB - Silicon avalanche photodiode with the Nπ₁Pπ₂P structure is fabricated, using the technology of epitaxitial growth after boron ion-implantation to bury a P layer. The diode with the excess noise factor of F5 is obtained at the multiplication factor of M100 for λµm.
ER -